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Номер произв C2335
Описание 2SC2335
Производители NEC
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DATA SHEET
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed
high-voltage switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES

• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A

• Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A

• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol

VCBO

VCEO

VEBO

IC(DC)

IC(pulse)

IB(DC)

PT

Tj

Tstg

Conditions

PW ≤ 300 µs,

duty cycle ≤ 10%

TC = 25°C

TA = 25°C

Ratings
500
400
7.0
7.0
15
Unit
V
V
V
A
A
3.5
40
1.5
150

−55 to +150

A
W
W

°C

°C

ORDERING INFORMATION
Part No.
2SC2335
Package
TO-220AB
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14861EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan

219928

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter
Symbol
Conditions
Collector to emitter voltage
Collector to emitter voltage
Collector to emitter voltage

VCEO(SUS)

VCEX(SUS)1

VCEX(SUS)2

IC = 3.0 A, IB1 = 0.6 A, L = 1 mH

IC = 3.0 A, IB1 = −IB2 = 0.6 A,

VBE(OFF) = −5.0 V, L = 180 µH, clamped

IC = 6.0 A, IB1 = 2.0 A, −IB2 = 0.6 A,

VBE(OFF) = −5.0 V, L = 180 µH, clamped

Collector cutoff current
Collector cutoff current
Collector cutoff current
Collector cutoff current

ICBO

ICER

ICEX1

ICEX2

VCB = 400 V, IE = 0 A

VCE = 400 V, RBE = 51 Ω, TA = 125°C

VCE = 400 V, VBE(OFF) = −1.5 V

VCE = 400 V, VBE(OFF) = −1.5 V,

TA = 125°C

Emitter cutoff current
DC current gain
DC current gain
DC current gain

Collector saturation voltage
Base saturation voltage
Turn-on time
Storage time
Fall time

IEBO

hFE1

hFE2

hFE3

VCE(sat)

VBE(sat)

ton

tstg

tf

VEB = 5.0 V, IC = 0 A

VCE = 5.0 V, IC = 0.1 ANote

VCE = 5.0 V, IC = 1.0 ANote

VCE = 5.0 V, IC = 3.0 ANote

IC = 3.0 A, IB = 0.6 ANote

IC = 3.0 A, IB = 0.6 ANote

IC = 3.0 A, RL = 50 Ω,

IB1 = −IB2 = 0.6 A, VCC ≅ 150 V

Refer to the test circuit.

Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE2

M
20 to 40
L
30 to 60
K
40 to 80

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

2SC2335
MIN.
400
450
400
20
20
10
TYP.
MAX.
10
1.0
10
1.0
10
80
80
1.0
1.2
1.0
2.5
1.0
Unit
V
V
V

µA

mA

µA

mA

µA

V
V

µs

µs

µs

Base current
waveform
Collector current
waveform

2 Data Sheet D14861EJ2V0DS

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TYPICAL CHARACTERISTICS (TA = 25°C)

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Data Sheet D14861EJ2V0DS
3

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Аналоги

Транзисторов которые были бы полным аналогом S9013 нет, но можно попытаться заменить его на такие зарубежные устройства:

  • 2SC1008;
  • KSC1008;
  • KSP42;
  • KSP43;
  • MPSA42;
  • MPSA43;
  • MPSW05;
  • ZTX457.

При замене нужно быть осторожным и перед принятием решения ознакомиться с технической документацией и после этого решать, подойдёт ли данный конкретный транзистор для замены. В качестве аналога также можно использовать отечественный КТ580, но он имеет другую распиновку. Также вместо S9013 можно попытаться установить КТ680, но к него немного другие параметры. Имеется также комплементарной пара – S9012.

IRF640NPBF Datasheet (PDF)

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PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif

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PD — 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi

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Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

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Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
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2SC2335F Datasheet (PDF)

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching

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DATA SHEETSILICON POWER TRANSISTOR2SC2335NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATIONhigh-voltage switching, and is ideal for use as a driver in devices suchPart No. Packageas switching regulators, DC/DC converters, and high-frequency power2SC2335 TO-220ABamplif

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AAA

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Другие транзисторы… 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
, 2SC4366
, 2SC4367
, D882
, 2SC4369
, 2SC437
, 2SC4370
, 2SC4371
, 2SC4372
, 2SC4373
, 2SC4374
, 2SC4375
.

Модификации и группы транзистора C3198

Модель PC UCB UCE UBE IC TJ fT CC hFE ٭ NF (типовое) dB Корпус
C3198 0,625 60 50 5 0,15 150 80 3,5 25…700 ≤ 10 TO-92
C SC3198 (O, Y, GR, BL) 0,625 60 50 5 0,15 125 80 3,5 25…700 ≤ 10 TO-92
FTC3198 0,625 60 50 5 0,15 150 80 3,5 25…700 ≤ 10 TO-92
KTC3198 0,625 60 50 5 0,15 150 80 3,5 25…700 ≤ 10 TO-92
KTC3198A 0,4 60 50 5 0,15 150 80 2 25…700 1 TO-92
KTC3198L ٭٭ 0,625 60 50 5 0,15 150 80 2 25…700 0,5 (1) 0,2 (2) TO-92

٭ — диапазон значений параметра hFE разделяется производителями во всех модификациях на четыре подгруппы (O, Y, GR, BL).

٭٭ — значения коэффициента шума транзистора KTC3198L: 0,5 (1) и 0,2 (2) определены при частотах сигнала соответственно 100 Гц и 1 кГц.

Основные электрические параметры

Значения напряжения и тока в таблице соответствуют температуре окружающей среды +25°C.

Обозначение Параметр Условия измерения Величина Ед. изм.
V(BR)CBO Напряжение пробоя коллектор-база IC=1мA, IE=0 60 В
V(BR)CЕO Напряжение пробоя коллектор-эмиттер IC=100мкA, IВ=0 50 В
V(BR)ЕBO Напряжение пробоя эмиттер-база IЕ=1мкA, IС=0 5 В
ICBO Ток отсечки коллектора VCB=60В, IE=0 0,1 мкА
ICЕO Ток отсечки коллектора V=45В, IE=0 0,1 мкА
IЕВО Ток отсечки эмиттера VЕВ=45В, IС=0 0,1 мкА
hFE(1) Коэффициент усиления по постоянному току VCE=6В, IC=1мA 70…700
hFE(2) VCE=6В, IC=0.1мA 40
VCE(sat) Напряжение насыщения коллектор-эмиттер IC=100мA, IB=10мA 0,3 В
VBE(sat) Напряжение насыщения база-эмиттер IC=100мA, IB=10мA 1 В
fT Граничная частота коэффициента передачи тока VCE=6В, IC=10mA, f=30МГц 200 МГц
Cob Выходная емкость коллектора VCB=10В, IE=0, f=1МГц 3 пФ
NF Уровень шума VCE=6В, IC=0.1мА RG=10кОм, f=1МГц 10 dB
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