A872 pdf ( даташит ) - pnp transistor

Электрические параметры

Характеристика
Обозначение
Параметры при измерениях
Значения Рабочее напряжение коллектор-эмиттер, В ٭
UCEO(SUS)
IC = 10 мА, IB = 0 А.
400 Ток коллектора выключения, мА ٭
Ta = 25°C
ICEO
UCEO = номинальное значение, UBE(OFF) = 1,5 В
1 Tc = 25°C
5 Ток эмиттера выключения, мА ٭
IEBO
UEB = 9,0 В, IC = 0
1 Напряжение насыщения коллектор-эмиттер, В ٭
UCE(sat)
IC = 0,5 А, IB = 0,1 А
0,5 IC = 1,0 А, IB = 0,25 А
1 IC = 1,2 А, IB = 0,4 А
3 IC = 1,0 А, IB = 0,25 А, Tc = 100°C
1 Напряжение насыщения база-эмиттер, В ٭
UBE(sat)
IC = 0,5 А, IB = 0,1 А
1 IC = 1,0 А, IB = 0,25 А
1,2 IC = 1,0 А, IB = 0,25 А, Tc = 100°C
1,1 Статический коэффициент усиления по току ٭
hFE (1)
UCE = 5,0 В, IC = 0,4 А
14….57 hFE (2)
UCE = 5,0 В, IC = 1,0 А
5…30 Выходная емкость коллектора, pF
Cob
UCB = 10 В, IE = 0, f = 0,1 МГц
21 Частота среза, МГц
fT
UCE = 10 В, IC = 0,1 А
10 Временные параметры транзистора при работе на резистивную нагрузку Время задержки, мкс
td
См

схему измерения временных параметров: UCC = 125 В, IC = 1 А, IB1 = IB2 = 0,2 А, tp = 25 мкс, скважность импульсов ≤ 1%
0,05 Время нарастания импульса тока, мкс
tr
0,5 Время сохранения импульса, мкс
ts
2 Время спадания импульса тока, мкс
tf
0,4 Временные параметры транзистора при работе на индуктивную нагрузку с ограничениями напряжений Время сохранения импульса, мкс
ts
IC = 1 А, UCLAMP = 300 В, IB1 = 0,2 А, UBE(OFF) = 5 В, Tc = 100°C.
1,7 Коммутационный промежуток, мкс
tc
0,29 Время спадания импульса тока, мкс
tf
0,15. ٭ — определено в импульсном режиме: длительность импульса = 300 мкс, скважность импульсов ≤ 2%. ٭ — определено в импульсном режиме: длительность импульса = 300 мкс, скважность импульсов ≤ 2%

Примечание: данные в таблицах действительны при температуре среды Ta=25°C, если не указано иное

٭ — определено в импульсном режиме: длительность импульса = 300 мкс, скважность импульсов ≤ 2%. Примечание: данные в таблицах действительны при температуре среды Ta=25°C, если не указано иное. Примечание: данные в таблицах действительны при температуре среды Ta=25°C, если не указано иное

Примечание: данные в таблицах действительны при температуре среды T_a=25°C, если не указано иное.

B772M Datasheet (PDF)

0.1. b772m.pdf Size:643K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors TO-252-2L B772M TRANSISTOR (PNP) FEATURES 1. BASE Low Speed Switching 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V

0.2. 2sb772m.pdf Size:341K _blue-rocket-elect

2SB772M(BR3CG772M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , hFE Low saturation voltage, excellent hFE linearity and high hFE. / Applications ,,

0.3. 2sb772m 3ca772m.pdf Size:220K _lzg

2SB772M(3CG772M) PNP /SILICON PNP TRANSISTOR :,, Purpose: Output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. :, h /Features: Low saturation voltage, excellent h linearity FEFEand high h . FE/Absolut

HSB772 Datasheet (PDF)

0.1. hsb772.pdf Size:51K _hsmc

Spec. No. : HE6605HI-SINCERITYIssued Date : 1993.05.15Revised Date : 2005.08.18MICROELECTRONICS CORP.Page No. : 1/5HSB772PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772 is designed for using in output stage of 1w audio amplifier, voltageregulator, DC-DC converter and relay driver.TO-126MLAbsolute Maximum Ratings (TA=25C) Maximum TemperaturesStorage Temperat

0.2. hsb772s.pdf Size:59K _hsmc

Spec. No. : HE6549HI-SINCERITYIssued Date : 1992.11.25Revised Date : 2004.08.13MICROELECTRONICS CORP.Page No. : 1/5HSB772SPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HSB772S is designed for using in output stage of 0.75W amplifier, voltageregulator, DC-DC converter and driver.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature………………

B772P Datasheet PDF — NEC

Part Number	B772P
Description	2SB772
Manufacturers	NEC
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DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
FEATURES

• Low saturation voltage

VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A)

• Excellent hFE linearity and high hFE

hFE = 60 to 400 (VCE = −2 V, IC = −1 A)

• Less cramping space required due to small and thin package and

reducing the trouble for attachment to a radiator.
No insulator bushing required.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
2.8 MAX.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
Junction Temperature
Maximum Power Dissipation

−55 to +150°C

150°C Maximum

Total Power Dissipation (TA = 25°C)

Total Power Dissipation (TC = 25°C)

Maximum Voltages and Currents (TA = 25°C)

VCBO

Collector to Base Voltage

VCEO

Collector to Emitter Voltage

VEBO

Emitter to Base Voltage

IC(DC)

Collector Current (DC)

IC(pulse)Note Collector Current (pulse)

Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2%

1.0 W
10 W

−40 V

−30 V

−5.0 V

−3.0 A

−7.0 A

12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
2.3 TYP.
2.3 TYP.
1.2 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTIC
SYMBOL
TEST CONDITIONS
DC Current Gain

hFE1

VCE = −2.0 V, IC = −20 mANote

DC Current Gain

hFE2

VCE = −2.0 V, IC = −1.0 mANote

Gain Bandwidth Product

fT VCE = −5.0 V, IC = −0.1 A

Output Capacitance

Cob VCB = −10 V, IE = 0, f = 1.0 MHz

Collector Cutoff Current

ICBO VCB = −30 V, IE = 0 A

Emitter Cutoff Current

IEBO VEB = −3.0 V, IC = 0 A

Collector Saturation Voltage

VCE(sat)

IC = −2.0 A, IB = −0.2 ANote

Base Saturation Voltage

VBE(sat)

IC = −2.0 A, IB = −0.2 ANote

Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2%

MIN.
30
60
TYP.
220
160
80
55

−0.3

−1.0

MAX.
400

−1.0

−0.5

−2.0

UNIT
MHz
pF

µA

V
V

CLASSIFICATION OF hFE

Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320

Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A

E
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17118EJ2V0DS00 (2nd edition)
(Previous No. TC-3569)
Date Published March 2004 N CP(K)
Printed in Japan

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