2N4403 transistor electrical specification description
In this description we explain the electrical specifications of the 2n4403 transistor, this also leads to explaining some of the applications of the 2n4403 transistor.
Voltage specs
The voltage specs of 2n4403 are collector to emitter and collector to base voltage is 40V and emitter to base voltage is 5V, it is the voltage value mostly had for a general-purpose transistor device.
Collector to emitter saturation voltage is 0.4 to 0.75v
Dissipation specs
The dissipation of a 2n4403 transistor device is 625Mw, this is the power dissipation value for a general-purpose transistor.
Current gain specs
The current gain value is very important for a transistor in many applications, 20 to 300Hfe.
Small signal DC current gain value is 60 to 500hFE
Current gain-bandwidth transition frequency
The bandwidth transition frequency value of the 2N4403 transistor is 200MHz, it is the frequency range of the transistor.
2N4403 vs 2N3906 vs 2N2907
In the table, we try to compare the electrical specifications of each transistor such as 2N4403, 2N3906, and 2N2907.
| Characteristics | 2N4403 | 2N3906 | 2N2907 |
|---|---|---|---|
| Collector to base voltage (VCB) | 40V | 40V | 60V |
| Collector to emitter voltage (VCE) | 40V | 40V | 60V |
| Emitter to base voltage (VEB) | 5V | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 0.4V to 0.75V | 0.25V to 0.4V | -0.4V to-1.6V |
| Collector current (IC) | 600mA | 200mA | 600mA |
| Power dissipation | 625mW | 625mW | 625mW |
| Junction temperature (TJ) | -55 to +150°C | -55 to +150°C | -55 to +150°C |
| Transition frequency (FT) | 200MHZ | 250MHZ | 200MHZ |
| Gain (hFE) | 20 to 300hFE | 30 to 300hFE | 50 to 300hFE |
| Noise figure (NF) | — | 4dB | — |
| Rise time (tr) | 20ns | 35ns | 40ns |
| Package | TO-92 | TO-92 | TO-92 |
The voltage specs of each transistor are identical and apt for a general-purpose application.
The rest of the electrical specifications of 2n4403, 2n3906, and 2n2907 transistor is the same, so we can use these transistors as the replacement for 2n4403.
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Описание транзистора 2N4403
Транзистор 2N4403 — биполярный, кремниевый, высокочастотный (30 МГц > FГР < 300 МГц) транзистор типа P-N-P, средней мощности (300 мВт > PК,МАКС < 1,5 Вт). Тип корпуса TO-92. Аналоги данного транзистора это транзисторы: NTE159, SK3466, BC327, BSS80C, PN200, THC4403, TMPT4403, 2N2907, 2N4143*, 2N4972*, 2N6001*, 2N6003*, 2N6005*, 2N6007*, 2N6011*, 2N6013*, 2N6015* A5T2907*, A5T4403*.
Транзистор
UКЭ0 /UКБ0 ПРОБВ
IК, МАКСмА
PК, МАКСмВт
h21Э
fгрМГц
Изготовитель
мин.
макс.
IКмА
UКЭВ
Название (полное)
Название (сокращённое)
2N4403
40/40
600
350
100
150
10
200
American Microsemiconductor Inc
AmerMicroSC
Advanced Semiconductor tnc
Advncd Semi
Allegro Microsystems Inc
AlegroMicro
Central Semiconductor Corp
CentralSemi
Continental Device India Ltd
Contin Dev
Crimson Semiconductor Inc
CrimsonSimi
Diodes Inc
Diodes Inc
Elm State Electronics lnc
Elm State
Hi-Tron Semiconductor
Hi-Tron
Toshiba Corp/Industria Mexicana Toshiba SA
KSL Microdevices Ing
KSL Micro
Micro Electronics Ltd
Micro Еlecs
Microsemi Corp
Microsemi
Mistral SPA
Mistral SpA
Motorola Semiconductor Products Inc
Motorola
NAS Etektronische Halbleiter Gmbh
NAS Elekt
National Semiconductor Corp
Natl Semi
Rochester Electronics Inc
Rochester
Rohm Со Ltd
Rohm Со Ltd
Samsung Electronics Inc
Samsung
Semelab Plc
Semelab
Semiconductors Inc
Semi Inc
Semiconductor Technology Inc
SemiconTech
Intex Со Inc/Semitronics Corp
Semitronics
Solid State Inc
Solid Stinc
Swampscott Electronics Со Inc
Swampscott
Toshiba America Electronic Components Inc
ToshibaAmer
Transistor Со
Transistor
United-Page Inc, UPI Semiconductor Division
UPI Semi
Space Power Electronics Inc
Space Power
Цоколёвка
Тип
Номера выводов
1
2
3
3 вывода
E
B
C
UКЭ0, ПРОБ — пробивное напряжение коллектор-эмиттер биполярного транзистора при токе базы, равном нулю.
UКБ0, ПРОБ — пробивное напряжение коллектор-база биполярного транзистора.
UКЭ — напряжение источника питания коллектора биполярного транзистора при измерении h21Э.
IК, МАКС — максимально допустимый постоянный ток коллектора биполярного транзистора.
IК — постоянный ток коллектора биполярного транзистора при измерении h21Э.
h21Э — статический коэффициент передачи тока биполярного транзистора в схеме с общим эмиттером.
fГР — граничная частота коэффициента передачи тока в схеме с общим эмиттером.
PК, МАКС — максимально допустимая постоянная рассеиваемая мощность коллектора биполярного транзистора.
* — Транзистор не является полным аналогом, но возможна замена.
2N4403 transistor characteristics
DC current gain characteristics of the 2N4403 transistor
The figure shows the DC current gain characteristics of the 2N4403 transistor, the graph is plotted with normalized current gain vs collector current.
For the reference, a fixed collector to emitter voltage is taken, such as a low value and a higher value.
At a lower voltage value, the temperature rises and the gain value reaches the higher limit and slightly drops at the end.
collector to emitter saturation voltage characteristics of the 2n4403 transistor
The figure shows the collector to emitter saturation voltage characteristics of the 2n4403 transistor, the graph is plotted with the collector to emitter voltage vs base current.
