Irlr120n datasheet pdf ( pinout ) - power mosfet ( transistor )

IRLR120N Datasheet (PDF)

..1. Size:173K international rectifier irlr120n.pdf

PD — 91541BIRLR/U120NHEXFET Power MOSFET Surface Mount (IRLR120N)D Straight Lead (IRLU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.185 Fully Avalanche RatedGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. Th

..2. Size:294K international rectifier irlr120npbf irlu120npbf.pdf

PD — 95082AIRLR/U120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescription ID = 10ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance

..3. Size:270K infineon irlr120npbf irlu120npbf.pdf

IRLR120NPbFIRLU120NPbFHEXFET Power MOSFETl Surface Mount (IRLR120N)l Straight Lead (IRLU120N)Dl Advanced Process TechnologyVDSS = 100Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.185l Lead-FreeGDescriptionFifth Generation HEXFETs from International Rectifier utilize ID = 10ASadvanced processing techniques to achieve the lowest possibleon-resistance pe

..4. Size:241K inchange semiconductor irlr120n.pdf

isc N-Channel MOSFET Transistor IRLR120N, IIRLR120NFEATURESStatic drain-source on-resistance:RDS(on)185mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

0.1. Size:444K infineon auirlr120n.pdf

AUTOMOTIVE GRADE AUIRLR120N Features HEXFET Power MOSFET Advanced Planar Technology Logic Level Gate Drive VDSS 100V Low On-Resistance Dynamic dV/dT Rating RDS(on) max. 0.185 175C Operating Temperature Fast Switching Fully Avalanche Rated ID 10A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D

0.2. Size:1960K cn vbsemi irlr120ntr.pdf

IRLR120NTRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATING

7.1. Size:1838K international rectifier irlr120pbf irlu120pbf.pdf

PD- 95382AIRLR120PbFIRLU120PbF Lead-Free12/07/04Document Number: 91324 www.vishay.com1IRLR/U120PbFDocument Number: 91324 www.vishay.com2IRLR/U120PbFDocument Number: 91324 www.vishay.com3IRLR/U120PbFDocument Number: 91324 www.vishay.com4IRLR/U120PbFDocument Number: 91324 www.vishay.com5IRLR/U120PbFDocument Number: 91324 www.vishay.com6IRLR/U12

7.2. Size:178K international rectifier irlr120.pdf

7.3. Size:224K fairchild semi irlr120a irlu120a.pdf

IRLR/U120AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.176 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ratings

7.4. Size:808K samsung irlr120a.pdf

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

7.5. Size:2396K vishay irlr120 irlu120 sihlr120 sihlu120.pdf

IRLR120, IRLU120, SiHLR120, SiHLU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100DefinitionRDS(on) ()VGS = 5.0 V 0.27 Dynamic dV/dt RatingQg (Max.) (nC) 12 Repetitive Avalanche Rated Surface Mount (IRLR120, SiHLR120)Qgs (nC) 3.0 Straight Lead (IRLU120, SiHLU120)Qgd (nC) 7.1 Available in

7.6. Size:288K inchange semiconductor irlr120.pdf

iscN-Channel MOSFET Transistor IRLR120FEATURESLow drain-source on-resistance:RDS(ON) 0.27 @V =5VGSEnhancement mode:Vth = 1.0 to 2.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

IRLR120N Datasheet PDF — Fairchild Semiconductor

Part Number	IRLR120N
Description	Power MOSFET ( Transistor )
Manufacturers	Fairchild Semiconductor
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$GYDQFHG 3RZHU 026)(7
IRLR120N
FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current: 10µA (Max.) @ VDS = 100V

Lower RDS(ON): 0.176Ω (Typ.)

BVDSS = 100 V

RDS(on) = 0.22Ω

ID = 8.4 A

D-PAK I-PAK
2
11
3
2
3
Absolute Maximum Ratings
Symbol

VDSS

IDM

VGS

EAS

IAR

EAR

dv/dt

TJ , TSTG

Characteristic
Drain-to-Source Voltage

Continuous Drain Current (TC=25°C)

Continuous Drain Current (TC=100°C)

Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt

Total Power Dissipation (TA=25°C) *

Total Power Dissipation (TC=25°C)

Linear Derating Factor
(3)
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
100
8.4
5
29

±20

94
8.4
3.5
6.5
2.5
35
0.28
— 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W

W/°C

°C

Thermal Resistance
Symbol
Characteristic
Typ.

RθJC

RθJA

Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
—
—
—

* When mounted on the minimum pad size recommended (PCB Mount).

Max.
3.5
50
110
Units

°C/W

Rev. B
1999 Fairchild Semiconductor Corporation
1

1&+$11(/
32:(5 026)(7
IRLR120N
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
Same Type

50kΩ as DUT

12V 200nF
300nF

VGS

10V

VGS

VDS

Qgs

DUT
3mA

R1 R2

Current Sampling (IG) Current Sampling (ID)

Resistor
Resistor

Qgd

Charge
10V

Vout

Vin

Fig 13. Resistive Switching Test Circuit & Waveforms

VDD

( 0.5 rated VDS )

Vout

90%
DUT
10%

Vin

td(on)

t on

td(off)

t off

Vary tp to obtain

required peak ID

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

VDS

EAS =

—1—
2

LL IAS2

BVDSS

———————

BVDSS — VDD

BVDSS

IAS

DUT
C

VDD

ID (t)

VDS (t)

Time
5

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