Irlr024n - параметры транзистора mosfet, его аналоги, datasheet

IRLR024N Datasheet (PDF)

..1. Size:162K international rectifier irlr024n.pdf

PD- 91363EIRLR024NIRLU024NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.065G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve the lowes

..2. Size:308K international rectifier irlr024npbf irlu024npbf.pdf

PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni

..3. Size:308K infineon irlr024npbf irlu024npbf.pdf

..4. Size:241K inchange semiconductor irlr024n.pdf

isc N-Channel MOSFET Transistor IRLR024N, IIRLR024NFEATURESStatic drain-source on-resistance:RDS(on)65mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

0.1. Size:312K international rectifier auirlr024ntr.pdf

PD- 96348AUTOMOTIVE GRADEAUIRLR024NAUIRLU024NFeatures Advanced Planar TechnologyHEXFET Power MOSFET Low On-ResistanceD Logic-Level Gate DriveV(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.065 Fast SwitchingG Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

0.2. Size:490K international rectifier auirlr024n auirlu024n.pdf

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

7.1. Size:168K international rectifier irlr024.pdf

7.2. Size:334K international rectifier irlr024zpbf irlu024zpbf.pdf

PD — 95773BIRLR024ZPbFIRLU024ZPbFHEXFET Power MOSFETFeaturesn Logic LevelDn Advanced Process TechnologyVDSS = 55Vn Ultra Low On-Resistancen 175C Operating TemperatureRDS(on) = 58mn Fast SwitchingGn Repetitive Avalanche Allowed up to Tjmaxn Lead-Free ID = 16ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ext

7.3. Size:744K international rectifier irlr024pbf irlu024pbf.pdf

PD- 96091IRLR024PbFIRLU024PbFHEXFET Power MOSFET Lead-FreeDescriptionAbsolute Maximum Ratings08/01/06Document Number: 91322 www.vishay.com1IRLR/U024PbFDocument Number: 91322 www.vishay.com2IRLR/U024PbFDocument Number: 91322 www.vishay.com3IRLR/U024PbFDocument Number: 91322 www.vishay.com4IRLR/U024PbFDocument Number: 91322 www.vishay.com5IRLR

7.4. Size:220K samsung irlr024a.pdf

IRLR/U024AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.061 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

7.5. Size:1198K vishay irlr024 irlu024 sihlr024 sihlu024.pdf

IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR024/SiHLR024)RDS(on) ()VGS = 5.0 V 0.10RoHS* Straight Lead (IRLU024/SiHLU024)Qg (Max.) (nC) 18COMPLIANT Available in Tape and ReelQgs (nC) 4.5Qgd (nC) 12 Logic-Level Gate DriveConfiguration Single

7.6. Size:717K infineon auirlr024z auirlu024z.pdf

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

Технические характеристики

Рассмотрим максимально возможные характеристики MOSFET-транзистора IRFZ24N:

напряжение сток-исток (V_D_SS_max) до 55 В;
сопротивление открытого N-канала (R_D_S₍_ON₎) до 0.07 Ом;
допустимый рабочий ток стока(I_D_max): при температуре кристалла T_C = +25ОС до 17 А; при T_C = +100ОС до 12 А;
пиковый (импульсный) ток стока (I_DМ_max) — 68 А;
рассеиваемая мощность при T_C = +25ОС (P_D) — 45 Вт;
предельно допустимое отпирающее напряжение между затвором и истоком (V_G_S_max) ±20 В;
максимальная энергия единичного импульса (E_AS) – 71 мДж;
пиковый неповторяющийся ток, допустимый в лавинных условиях (I_AR) – 10 А;
неповторяющаяся энергия, которая может быть рассеяна в условиях лавинного пробоя (E_AR) – 4,5 мДж;
наибольший возможный импульс на восстанавливающемся диоде dv/dt – 5.0 В/нс;
диапазон температур, при которых может храниться изделие от — 55 до +175 °C;
температура пайки (не более 10 секунд) – 300 (на расстоянии 1,6 миллиметра от упаковки).

При этом надо знать, что реальные рабочие значения у устройства должны быть меньше предельно допустимых примерно на 20-30%.

Электрические

Электрические параметры IRFZ24N приведены в таблице ниже. Других значения при которых производились измерения, приведены в отдельном столбе. Температура перехода (T_J) равна +25ОС, если не указано другого.

Аналоги

Полным аналогом irfz24n считается транзистор STB140NF55 (STMicroelectronics) . Правда у них корпус ТО220, но расположение выводов (распиновка) совпадает с оригиналом. В большинстве случаев, при его использовании, не потребуется вносить дополнительных изменений в схему. А вот еще возможные варианты замены для рассматриваемого устройства с похожими параметрами: 2SK1114, BUZ10, BUZ101, BUZ101S, BUZ104, BUZ104S, HUF75307P3, HUF75309P3, IRFZ24A, MTP15N06V, MTP20N06V, RFP14N05, RFP14N06, RFP15N06, SFP16N06, STP140NF55, STP16NE06, STP20N06, STPNE06, STP20NF06, 2SK2311, IRFIZ24A, 2SK2311, IRFWZ24A, STB16NF06LT.

IRLR024N Datasheet PDF — International Rectifier

Part Number	IRLR024N
Description	(IRLU/R024N) Power MOSFET
Manufacturers	International Rectifier
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PD- 91363E
IRLR024N
IRLU024N

HEXFETPower MOSFET

l Logic-Level Gate Drive

l Surface Mount (IRLR024N)

l Straight Lead (IRLU024N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

G
D

VDSS = 55V

RDS(on) = 0.065Ω

ID = 17A

S
Description

Fifth Generation HEXFETPower MOSFETs from International Rectifier

utilize advanced processing techniques to achieve the lowest possible on-
resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device for use in
a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
I-Pak
IRLR024N IRLU024N
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.

RθJC

RθJA

Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1″ square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
50
110
Units
°C/W
1
2/10/00

IRLR/U024N
20
15
10
5

25 50 75 100 125 150 175

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature
10

VDS

VGS

D.U.T.
5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%
10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

D = 0.50
1
0 .2 0
0 .1 0
0.05
0 .0 2
0.01
0.1
S IN G LE P U LS E
(TH ERM AL RESPO NSE)
0.01
0.00001
0.0001

PD M

t1
t2
Notes:
1. Duty factor D = t1 / t2

2. P eak TJ = P D M x Z thJC + T C

0.001
0.01
0.1

t1 , Rectangular Pulse D uration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com
A
1
5

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