Irl3803v pdf даташит

There is a preview and IRL3803 download ( pdf file ) link at the bottom of this page.

Total 8 Pages

No Preview Available !

l Logic-Level Gate Drive

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance

RθJC

RθCS

RθJA

Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

PD — 91301D

IRL3803

HEXFETPower MOSFET

D

VDSS = 30V

G RDS(on) = 0.006Ω

S ID = 140A

TO-220AB
Max.

140

98

470
200
1.3
±16
610
71
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Min.
––––
––––
––––
Typ.
––––
0.50
––––
Max.
0.75
––––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1/5/04

IRL3803
140
120
100
80
60
40
20

25
LIMITED BY PACKAGE
50 75 100 125 150

TC , Case Temperature ( °C)

175

Fig 9. Maximum Drain Current Vs.

Case Temperature
1

VDS

VGS

RG

RD

D.U.T.
4.5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%
10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

D = 0.50
0.20

0.1 0.10

0.05
0.02
0.01
0.01
0.00001

PDM

t1

SINGLE PULSE
(THERMAL RESPONSE)
Notes:

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x Z thJC + TC

t2

0.0001
0.001
0.01

t1, Rectangular Pulse Duration (sec)

0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRL3803 electronic component.

An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.