Alternate Parts for IRFBC20
This table gives cross-reference parts and alternative options found for IRFBC20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Functional Equivalents (7)
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
|
IRFBC20PBF |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies |
IRFBC20 vs IRFBC20PBF |
|
IRFBC20 |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies |
IRFBC20 vs IRFBC20 |
|
SIHFBC20-E3 |
TRANSISTOR 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix |
IRFBC20 vs SIHFBC20-E3 |
|
SIHFBC20 |
TRANSISTOR 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix |
IRFBC20 vs SIHFBC20 |
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
|
IRFBC20PBF |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies |
IRFBC20 vs IRFBC20PBF |
|
IRFBC20-003PBF |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies |
IRFBC20 vs IRFBC20-003PBF |
|
SIHFBC20-E3 |
TRANSISTOR 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix |
IRFBC20 vs SIHFBC20-E3 |
|
IRFBC20-030PBF |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Vishay Intertechnologies |
IRFBC20 vs IRFBC20-030PBF |
|
SIHFBC20 |
TRANSISTOR 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix |
IRFBC20 vs SIHFBC20 |
|
IRFBC20 |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies |
IRFBC20 vs IRFBC20 |
|
IRFBC20-030 |
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies |
IRFBC20 vs IRFBC20-030 |
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IRFBC20 Datasheet (PDF)
..1. Size:171K international rectifier irfbc20.pdf
..2. Size:2081K international rectifier irfbc20pbf.pdf
PD — 94985IRFBC20PbF Lead-Free2/5/04Document Number: 91006 www.vishay.com1IRFBC20PbFDocument Number: 91006 www.vishay.com2IRFBC20PbFDocument Number: 91006 www.vishay.com3IRFBC20PbFDocument Number: 91006 www.vishay.com4IRFBC20PbFDocument Number: 91006 www.vishay.com5IRFBC20PbFDocument Number: 91006 www.vishay.com6IRFBC20PbFTO-220AB Package Out
..3. Size:1571K vishay irfbc20pbf sihfbc20.pdf
IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
..4. Size:1568K vishay irfbc20 sihfbc20.pdf
IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
..5. Size:1520K infineon irfbc20 sihfbc20.pdf
IRFBC20, SiHFBC20Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 4.4RoHS* Fast SwitchingQg (Max.) (nC) 18COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 8.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
..6. Size:284K inchange semiconductor irfbc20.pdf
iscN-Channel MOSFET Transistor IRFBC20FEATURESLow drain-source on-resistance:RDS(ON) = 4.4 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
0.1. Size:396K international rectifier irfbc20spbf irfbc20lpbf.pdf
PD — 95543IRFBC20S/LPbF Lead-Free7/21/04Document Number: 91007 www.vishay.com1IRFBC20S/LPbFDocument Number: 91007 www.vishay.com2IRFBC20S/LPbFDocument Number: 91007 www.vishay.com3IRFBC20S/LPbFDocument Number: 91007 www.vishay.com4IRFBC20S/LPbFDocument Number: 91007 www.vishay.com5IRFBC20S/LPbFDocument Number: 91007 www.vishay.com6IRFBC20S/LPbF
0.2. Size:355K international rectifier irfbc20s irfbc20l.pdf
PD — 9.1014IRFBC20S/LPRELIMINARYHEXFET Power MOSFET Surface Mount (IRFBC20S)D Low-profile through-hole (IRFBC20L) VDSS = 600V Available in Tape & Reel (IRFBC20S) Dynamic dv/dt RatingRDS(on) = 4.4 150C Operating TemperatureG Fast SwitchingID = 2.2A Fully Avalanche RatedSDescriptionThird generation HEXFETs from international Rectifier provide the designer
0.3. Size:251K vishay irfbc20lpbf.pdf
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface Mount (IRFBC20S/SiHFBC20S)VDS (V) 600 Low-Profile Through-Hole (IRFBC20L/SiHFBC20L)AvailableRDS(on) ()VGS = 10 V 4.4 Available in Tape and Reel (IRFBC20S/SiHFBC20S)RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 18 150 C Operating TemperatureQg
0.4. Size:266K vishay irfbc20s sihfbc20s irfbc20l sihfbc20l.pdf
IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 600 Surface Mount (IRFBC20S, SiHFBC20S)RDS(on) ()VGS = 10 V 4.4 Low-Profile Through-Hole (IRFBC20L, SiHFBC20L) Available in Tape and Reel (IRFBC20, SiiHFBC20S)Qg (Max.) (nC) 18 Dynamic dV/dt RatingQgs
