P-канальные MOSFET транзисторы одноканальные
SOT-23
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-20 В |
P-Channel, -20V, 2.6A, 135 mOhm, 2.5V Drive capable, SOT-23 |
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P-Channel, -20V, 4.3A, 54 mOhm, 2.5V Drive capable, SOT-23 |
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-30 В |
P-Channel, -30V, 1A, 150 mOhm, SOT-23 |
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P-Channel, -30V, 3.6A, 64 mOhm, SOT-23 |
PQFN 2×2 мм, 3×3 мм
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-20 В |
P-Channel, -20V, 8.5A, 31 mOhm, 2.5V Capable PQFN2x2 |
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-30 В |
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P-Channel, -30V, 10A, 15 mOhm, PQFN33 |
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P-Channel, -30V, 8.5A, 37 mOhm, PQFN2x2 |
SO-8 и TSOP-6
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-30 В |
IRFTS9342TRPBF |
P-Channel, -30V, 6A, 39 mOhm, TSOP-6 |
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P-Channel, -30V, 5.4A, 59 mOhm, SO-8 |
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P-Channel, -30V, 7.5A, 19 mOhm, SO-8 |
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P-Channel, -30V, 9A, 17.5 mOhm, SO-8 |
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P-Channel, -30V, 10A, 12 mOhm, SO-8 |
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P-Channel, -30V, 15A, 7.2 mOhm, SO-8 |
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P-Channel, -30V, 16A, 6.6 mOhm, SO-8 |
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P-Channel, -30V, 21A, 4.6 mOhm, SO-8 |
PQFN 5×6мм
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-30 В |
P-Channel, -30V, 23A, 4.6 mOhm, PQFN5X6 |
2N7002KW Datasheet (PDF)
0.1. 2n7002kw.pdf Size:286K _fairchild_semi
May 20112N7002KWN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101DSSOT-323GMarking : 7KWAb
0.2. s2n7002kw.pdf Size:536K _secos
S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of -C specifies halogen & lead-free SOT-323FEATURES Low on-resistance Fast switching Speed AL Low-voltage drive 33 Easily designed drive circuits Top View C B11 2 ESD protected:1500V 2K EDH JF GMillimeter MillimeterREF. REF.
0.3. 2n7002kw.pdf Size:527K _secos
0.4. 2n7002kw.pdf Size:1922K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS2N7002KW N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 2.5 3 1. GATE2. SOURCE123. DRAINFEATURE APPLICATION High density cell design for Low RDS(on) Voltage controlled sm
