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IRLR8726PBF Datasheet PDF — International Rectifier

Part Number IRLR8726PBF
Description HEXFET Power MOSFET
Manufacturers International Rectifier 
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PD — 97146
IRLR8726PbF
IRLU8726PbF
Applications

l High Frequency Synchronous Buck

Converters for Computer Processor Power

l High Frequency Isolated DC-DC

Converters with Synchronous Rectification
for Telecom and Industrial Use

HEXFETPower MOSFET

VDSS

RDS(on) max

Qg (typ.)

30V 5.8m @VGS = 10V 15nC

DD
Benefits

l Very Low RDS(on) at 4.5V VGS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l Lead-Free

l RoHS compliant

Absolute Maximum Ratings
Parameter

VDS

VGS

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

PD @TC = 100°C

Drain-to-Source Voltage
Gate-to-Source Voltage

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

hMaximum Power Dissipation

hMaximum Power Dissipation

TJ

TSTG

Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
S
D
G
D-Pak
IRLR8726PbF
S
GD
I-Pak
IRLU8726PbF
G
Gate
D
Drain
S
Source
Max.
30
± 20

86f

61f

340
75
38
0.5
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter

hRθJC

Junction-to-Case

ghÃRθJA Junction-to-Ambient (PCB Mount)

hRθJA Junction-to-Ambient

Notes through are on page 11

Typ.
–––
–––
–––
Max.
2.0
50
110
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
12/16/08

www.DataSheet4U.com
IRLR/U8726PbF
100
LIMITED BY PACKAGE
80
60
40
20

25
50 75 100 125 150
TC , Case Temperature (°C)
175

Fig 9. Maximum Drain Current vs.

Case Temperature
2.5

ID = 500μA

ID = 50μA

2.0 ID = 25μA

1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

10

1 D = 0.50

0.20
0.10

0.1 0.05

0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001

τJ

τJ

τ1

τ1

R1R1

CiC=iτiRiiRi

R2R2

τ2 τ2

R3R3

R4R4

τC

Ri (°C/W)
0.014297

τι (sec)

0.000003

τ3 τ4 τ 0.373312 0.00009

τ3 τ4 1.010326 0.000973

0.602065 0.007272
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRLR8726 Datasheet (PDF)

 ..1. Size:354K  international rectifier irlu8726pbf irlr8726pbf.pdf

PD — 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I

 ..2. Size:354K  infineon irlr8726pbf irlu8726pbf.pdf

PD — 97146AIRLR8726PbFIRLU8726PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) max Qg (typ.)Converters for Computer Processor Power30V 5.8m @VGS = 10V 15nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationDD for Telecom and Industrial UseBenefitsSl Very Low RDS(on) at 4.5V VGSSDDGl Ultra-Low Gate I

 ..3. Size:243K  inchange semiconductor irlr8726.pdf

isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726FEATURESStatic drain-source on-resistance:RDS(on)5.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 7.1. Size:347K  international rectifier irlu8729pbf irlr8729pbf.pdf

PD — 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C

 7.2. Size:232K  international rectifier irlr8729pbf-1.pdf

IRLR8729PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.9 m(@V = 10V)GSSQg (typical) 10 nCGGID 58 AD-PakS(@T = 25C)CIRLR8729PbF-1Features BenefitsIndustry-standard pinout D-Pak and I-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier

 7.3. Size:293K  international rectifier irlu8721pbf irlr8721pbf.pdf

IRLR8721PbFIRLU8721PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) maxQgl High Frequency Synchronous BuckConverters for Computer Processor Power30V 8.4m 8.5nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial Usel Lead-FreeS SDG GBenefitsD-Pakl Very Low RDS(on) at 4.5V VGS I-PakIRLR8721PbFIRLU8721PbF

 7.4. Size:259K  international rectifier irlr8721pbf-1.pdf

IRLR8721PbF-1HEXFET Power MOSFETVDS 30 VDDRDS(on) max 8.4 m(@V = 10V)GSSGQg (typical) 8.5 nCGID 65 A D-PakS(@T = 25C)CIRLR8721PbF-1Features BenefitsIndustry-standard pinout D-Pak Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Indu

 7.5. Size:347K  infineon irlr8729pbf irlu8729pbf.pdf

PD — 97352BIRLR8729PbFIRLU8729PbFHEXFET Power MOSFETApplicationsl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Power30V 8.9m 10nCl High Frequency Isolated DC-DC Converters with Synchronous RectificationD for Telecom and Industrial UseBenefitsS Sl Very Low RDS(on) at 4.5V VGSDG Gl Ultra-Low Gate Impedancel Fully C

 7.6. Size:1635K  cn vbsemi irlr8729tr.pdf

IRLR8729TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSO

 7.7. Size:243K  inchange semiconductor irlr8729.pdf

isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729FEATURESStatic drain-source on-resistance:RDS(on)8.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFully characterized avalanche voltage and currentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

 7.8. Size:242K  inchange semiconductor irlr8721.pdf

isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721FEATURESStatic drain-source on-resistance:RDS(on)8.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency Synchronous Buck Converters For ComputerProcessor PowerABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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