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PD- 91334E
IRLR/U2905

HEXFETPower MOSFET

l Logic-Level Gate Drive

l Ultra Low On-Resistance

l Surface Mount (IRLR2905)

l Straight Lead (IRLU2905)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

G
D

VDSS = 55V

RDS(on) = 0.027Ω

ID = 42A

S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
T O -252 AA
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.

42

30
160
110
0.71
± 16
210
25
11
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.

RθJC

RθJA

RθJA

Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1″ square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
1.4
50
110
I-Pak
T O -25 1AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
12/8/00

50
LIMITED BY PACKAGE
40
30
20
10

25 50 75 100 125 150 175

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature
10
IRLR/U2905

VDS

VGS

RG

RD

D.U.T.
5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%
10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

1
D = 0.50
0.20
0.10

0.1 0.05

0.02
0.01
0.01
0.00001

PDM

SINGLE PULSE
(THERMAL RESPONSE)

t1

t2

0.0001
Notes:

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x Z thJC + TC

0.001

t1, Rectangular Pulse Duration (sec)

0.01
0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com
5

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