Irlb3034pbf pdf даташит

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Irlb3034pbf - параметры транзистора mosfet, его аналоги, datasheet - справочник транзисторов

IRLB3034PBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRLB3034PBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 375
W

Предельно допустимое напряжение сток-исток |Uds|: 40
V

Предельно допустимое напряжение затвор-исток |Ugs|: 20
V

Пороговое напряжение включения |Ugs(th)|: 2.5
V

Максимально допустимый постоянный ток стока |Id|: 195
A

Максимальная температура канала (Tj): 175
°C

Общий заряд затвора (Qg): 162
nC

Время нарастания (tr): 827
ns

Выходная емкость (Cd): 1980
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0017
Ohm

Тип корпуса:

IRLB3034PBF
Datasheet (PDF)

 ..1. Size:291K  international rectifier irlb3034pbf.pdf

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

 ..2. Size:291K  infineon irlb3034pbf.pdf

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

 7.1. Size:250K  international rectifier auirlb3036.pdf

AUTOMOTIVE GRADEAUIRLB3036HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS 60Vl Ultra Low On-ResistanceRDS(on) typ.1.9ml Logic Level Gate Drivemax. 2.4ml Dynamic dv/dt RatingGID (Silicon Limited)l 175C Operating Temperature 270Al Fast SwitchingID (Package Limited)S 195Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compli

 7.2. Size:294K  international rectifier irlb3036gpbf.pdf

PD — 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 7.3. Size:284K  international rectifier irlb3036pbf.pdf

PD — 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 7.4. Size:251K  inchange semiconductor irlb3036.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

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.

IRLB3034PBF Datasheet (PDF)

 ..1. Size:291K  international rectifier irlb3034pbf.pdf

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

 ..2. Size:291K  infineon irlb3034pbf.pdf

PD -97363IRLB3034PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 40Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.4ml Uninterruptible Power Supply max. 1.7ml High Speed Power SwitchingGID (Silicon Limited) 343Al Hard Switched and High Frequency CircuitsID (Package Limited) 195ASBenefitsl Optimized for Logic Level Drivel

 7.1. Size:250K  international rectifier auirlb3036.pdf

AUTOMOTIVE GRADEAUIRLB3036HEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS 60Vl Ultra Low On-ResistanceRDS(on) typ.1.9ml Logic Level Gate Drivemax. 2.4ml Dynamic dv/dt RatingGID (Silicon Limited)l 175C Operating Temperature 270Al Fast SwitchingID (Package Limited)S 195Al Repetitive Avalanche Allowed up to Tjmaxl Lead-Free, RoHS Compli

 7.2. Size:294K  international rectifier irlb3036gpbf.pdf

PD — 96275IRLB3036GPbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 7.3. Size:284K  international rectifier irlb3036pbf.pdf

PD — 97357IRLB3036PbFHEXFET Power MOSFETApplicationsDl DC Motor DriveVDSS 60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.1.9ml Uninterruptible Power Supplymax. 2.4ml High Speed Power SwitchingGID (Silicon Limited) 270Al Hard Switched and High Frequency CircuitsID (Package Limited)S 195ABenefitsl Optimized for Logic Level Drive

 7.4. Size:251K  inchange semiconductor irlb3036.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRLB3036 IIRLB3036FEATURESStatic drain-source on-resistance:RDS(on) 2.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

IRLB3034PBF Datasheet PDF — International Rectifier

Part Number IRLB3034PBF
Description 40V Single N-Channel HEXFET Power MOSFET
Manufacturers International Rectifier　
Logo 　

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PD -97363

IRLB3034PbF
Applications

wwlw.dDatCashMeeot4tou.rcoDmrive

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

G
Benefits

l Optimized for Logic Level Drive

l Very Low RDS(ON) at 4.5V VGS

l Superior R*Q at 4.5V VGS

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

HEXFETPower MOSFET

D VDSS

40V

RDS(on) typ.

1.4m

max. 1.7m

cID (Silicon Limited) 343A

S ID (Package Limited) 195A

TO-220AB
IRLB3034PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter

ID @ TC = 25°C

ID @ TC = 100°C

ID @ TC = 25°C

IDM

PD @TC = 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, VGS @ 10V (Package Limited)

dPulsed Drain Current

Maximum Power Dissipation
Linear Derating Factor

VGS

dv/dt
Gate-to-Source Voltage

fPeak Diode Recovery

TJ

TSTG

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics

EAS (Thermally limited)

IAR

EAR

eSingle Pulse Avalanche Energy

dAvalanche Current

dRepetitive Avalanche Energy

Thermal Resistance
Symbol

RθJC

Parameter

jJunction-to-Case

RθCS

Case-to-Sink, Flat, Greased Surface

RθJA Junction-to-Ambient

D
Drain
Max.

c343

c243

195
1372
375
2.5
±20
4.6
-55 to + 175
300

x x10lbf in (1.1N m)

255
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.5
–––
Max.
0.4
–––
62
S
Source
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
01/14/09

IRLB3034PbF
1
0.1
www.datasheet4u.com
0.01
0.001
1E-006
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

R2R2

τ2 τ2

R3R3

τ3 τ3

R4R4

τCτ

Ri (°C/W)
0.02477
0.08004

τi (sec)

0.000025
0.000077

τ4τ4 0.19057 0.001656

CiC= iτiRiiRi

0.10481 0.008408
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0.1
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)

100 0.01

0.05
0.10
10
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τ j = 25°C and

Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

1.0E-01
300
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
250 ID = 195A
200
150
100
50

25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 14, 15).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth

EAS (AR) = PD (ave)·tav

Fig 15. Maximum Avalanche Energy vs. Temperature

www.irf.com
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