Irfb3306pbf pdf даташит

Irfb3306pbf pdf даташит

IRFB3306 Datasheet (PDF)

 ..1. Size:323K  international rectifier irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

 ..2. Size:327K  infineon irfb3306pbf irfs3306pbf irfsl3306pbf.pdf

IRFB3306PbFIRFS3306PbFIRFSL3306PbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPS VDSS60Vl Uninterruptible Power SupplyRDS(on) typ.3.3ml High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A BenefitsID (Package Limited)120A Sl Improved Gate, Avalanche and Dynamic dV/

 ..3. Size:245K  inchange semiconductor irfb3306.pdf

isc N-Channel MOSFET Transistor IRFB3306IIRFB3306FEATURESStatic drain-source on-resistance:RDS(on) 4.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh efficiency synchronous rectification in SMPSUninterrruptible power supplyHigh speed pow

 0.1. Size:292K  international rectifier irfb3306gpbf.pdf

PD — 96211IRFB3306GPbFHEXFET Power MOSFETApplicationsDVDSS60Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.3.3ml Uninterruptible Power Supplyl High Speed Power Switching max. 4.2ml Hard Switched and High Frequency CircuitsGID (Silicon Limited) 160A ID (Package Limited)120A SBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDRugged

 7.1. Size:243K  international rectifier irfb3307zgpbf.pdf

PD — 96212AIRFB3307ZGPbFApplicationsl High Efficiency Synchronous Rectification inHEXFET Power MOSFETSMPSl Uninterruptible Power SupplyDVDSS75Vl High Speed Power SwitchingRDS(on) typ.l Hard Switched and High Frequency Circuits 4.6m max. 5.8mGID (Silicon Limited)128ABenefitsSID (Package Limited)120Al Improved Gate, Avalanche and Dynamicdv/dt Rugg

 7.2. Size:316K  international rectifier irfb3307zpbf irfs3307zpbf irfs3307ztrlpbf irfsl3307zpbf.pdf

PD — 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 7.3. Size:140K  international rectifier irfb3307pbf.pdf

PD — 95706CIRFB3307PbFIRFS3307PbFIRFSL3307PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS75Vl Uninterruptible Power Supplyl High Speed Power Switching RDS(on) typ.5.0ml Hard Switched and High Frequency CircuitsG max. 6.3mID120ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterize

 7.4. Size:316K  infineon irfb3307zpbf irfs3307zpbf irfsl3307zpbf.pdf

PD — 97214DIRFB3307ZPbFIRFS3307ZPbFApplicationsIRFSL3307ZPbFl High Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETl Uninterruptible Power Supplyl High Speed Power Switching D VDSS75Vl Hard Switched and High Frequency CircuitsRDS(on) typ.4.6m max. 5.8mGID (Silicon Limited)128ABenefitsID (Package Limited)120ASl Improved Gate, Av

 7.5. Size:245K  inchange semiconductor irfb3307.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307 IIRFB3307FEATURESStatic drain-source on-resistance:RDS(on) 6.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 7.6. Size:246K  inchange semiconductor irfb3307z.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB3307Z IIRFB3307ZFEATURESStatic drain-source on-resistance:RDS(on) 5.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXI

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