Irfz24n характеристики транзистора, datasheet, цоколевка и аналоги

Alternate Parts for IRFR024N

This table gives cross-reference parts and alternative options found for IRFR024N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR024N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Functional Equivalents (10)

Part Number	Description	Manufacturer	Compare
IRFR024NTRPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2	Infineon Technologies AG	IRFR024N vs IRFR024NTRPBF
IRFR024NTRR	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	International Rectifier	IRFR024N vs IRFR024NTRR
AUIRFR024N	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	Infineon Technologies AG	IRFR024N vs AUIRFR024N
IRFR024NTRPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	International Rectifier	IRFR024N vs IRFR024NTRPBF
IRFR024NTRLPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2	Infineon Technologies AG	IRFR024N vs IRFR024NTRLPBF
AUIRFR024NTRL	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3	International Rectifier	IRFR024N vs AUIRFR024NTRL
AUIRFR024N	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3	International Rectifier	IRFR024N vs AUIRFR024N
AUIRFR024NTRL	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3	Infineon Technologies AG	IRFR024N vs AUIRFR024NTRL
IRFR024NTRRPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3	International Rectifier	IRFR024N vs IRFR024NTRRPBF
IRFR024NTRRPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2	Infineon Technologies AG	IRFR024N vs IRFR024NTRRPBF

Part Number	Description	Manufacturer	Compare
2SK2412	20A, 60V, 0.095ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-45F, ISOLATED TO-220, 3 PIN	Renesas Electronics Corporation	IRFR024N vs 2SK2412
HUF75309P3	Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,	Fairchild Semiconductor Corporation	IRFR024N vs HUF75309P3
IRFR024NTRRPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3/2	Infineon Technologies AG	IRFR024N vs IRFR024NTRRPBF
MTD2N40E-T4	Power Field-Effect Transistor, 2A I(D), 400V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET	Motorola Semiconductor Products	IRFR024N vs MTD2N40E-T4
BUZ71L	Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB	Siemens	IRFR024N vs BUZ71L
HUF75309D3ST	17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	Intersil Corporation	IRFR024N vs HUF75309D3ST
HUF75329D3S_NL	Power Field-Effect Transistor, 20A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,	Fairchild Semiconductor Corporation	IRFR024N vs HUF75329D3S_NL
MTD15N06VLT4	15A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3	onsemi	IRFR024N vs MTD15N06VLT4
IRFZ24NPBF	Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3	Infineon Technologies AG	IRFR024N vs IRFZ24NPBF
BUZ10	19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET	TT Electronics Power and Hybrid / Semelab Limited	IRFR024N vs BUZ10

IRFR024N Datasheet PDF — International Rectifier

Part Number	IRFR024N
Description	Power MOSFET ( Transistor )
Manufacturers	International Rectifier
Logo
There is a preview and IRFR024N download ( pdf file ) link at the bottom of this page. Total 10 Pages

Preview 1 page

No Preview Available !

PRELIMINARY
PD- 9.1336A
IRFR/U024N

HEXFETPower MOSFET

l Ultra Low On-Resistance

l Surface Mount (IRFR024N)

l Straight Lead (IRFU024N)

l Advanced Process Technology

l Fast Switching

l Fully Avalanche Rated

G
D

VDSS = 55V

RDS(on) = 0.075Ω

ID = 17A

S
Description

www.DataFSihftehet4GUe.ncoemration HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D -P ak
T O -2 52 A A
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
68
45
0.30
± 20
71
10
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.

RθJC

RθJA

Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
–––
–––
–––
** When mounted on 1″ square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
Max.
3.3
50
110
I-P a k
TO -251AA
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1

IRFR/U024N
20
16
12
8

www.DataShee4t4U.com

25 50 75 100 125 150 175

TC , C ase Tem perature (°C )

Fig 9. Maximum Drain Current Vs.

Case Temperature
10

VDS

VGS

D.U.T.
4.5V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

+-VDD

Fig 10a. Switching Time Test Circuit

VDS

90%
10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

D = 0.50
1
0 .2 0
0 .1 0
0 .0 5
0 .0 2
0 .0 1
0.1
S IN G L E P U L S E
(THERMAL R ESPON SE)
0.01
0.00001
0.0001

PD M

Notes:

1. Duty factor D = t1 / t 2

t1
t2

2. P eak TJ = P D M x Z thJC + T C

0.001
0.01

t1 , Rectangular Pulse Duration (sec)

0.1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com
A
1
5

Preview 5 Page

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFR024N electronic component.