Irfbe30 datasheet pdf ( pinout ) - power mosfet ( transistor )

Alternate Parts for irfbe30

This table gives cross-reference parts and alternative options found for irfbe30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of irfbe30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Functional Equivalents (9)

Part Number	Description	Manufacturer	Compare
BUZ81	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Infineon Technologies AG	IRFBE30 vs BUZ81
IRFBE30PBF	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN	Vishay Siliconix	IRFBE30 vs IRFBE30PBF
IRFBE30	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Vishay Siliconix	IRFBE30 vs IRFBE30
BUZ80A	Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Siemens	IRFBE30 vs BUZ80A
STP4NA80	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN	STMicroelectronics	IRFBE30 vs STP4NA80
MTP4N80E	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	Motorola Mobility LLC	IRFBE30 vs MTP4N80E
BUZ80A	Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Infineon Technologies AG	IRFBE30 vs BUZ80A
MTP4N80E	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN	onsemi	IRFBE30 vs MTP4N80E
BUK456-800A	TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power	NXP Semiconductors	IRFBE30 vs BUK456-800A

Part Number	Description	Manufacturer	Compare
IRFBE30	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Vishay Siliconix	IRFBE30 vs IRFBE30
IRFBE30PBF	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN	Vishay Siliconix	IRFBE30 vs IRFBE30PBF
STP4NA80	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN	STMicroelectronics	IRFBE30 vs STP4NA80
BUZ80A	Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Siemens	IRFBE30 vs BUZ80A
MTP4N80E	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	Motorola Mobility LLC	IRFBE30 vs MTP4N80E
MTP4N80E	4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN	onsemi	IRFBE30 vs MTP4N80E
BUZ81	Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Infineon Technologies AG	IRFBE30 vs BUZ81
BUZ80A	Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Infineon Technologies AG	IRFBE30 vs BUZ80A
BUK456-800A	TRANSISTOR 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power	NXP Semiconductors	IRFBE30 vs BUK456-800A

IRFBE30 MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFBE30

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 125
W

Предельно допустимое напряжение сток-исток |Uds|: 800
V

Предельно допустимое напряжение затвор-исток |Ugs|: 20
V

Пороговое напряжение включения |Ugs(th)|: 4
V

Максимально допустимый постоянный ток стока |Id|: 4.1
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 78(max)
nC

Время нарастания (tr): 33
ns

Выходная емкость (Cd): 310
pf

Сопротивление сток-исток открытого транзистора (Rds): 3
Ohm

Тип корпуса:

IRFBE30
Datasheet (PDF)

..1. Size:2101K international rectifier irfbe30pbf.pdf

PD — 94945IRFBE30PbF Lead-Free1/15/04Document Number: 91118 www.vishay.com1IRFBE30PbFDocument Number: 91118 www.vishay.com2IRFBE30PbFDocument Number: 91118 www.vishay.com3IRFBE30PbFDocument Number: 91118 www.vishay.com4IRFBE30PbFDocument Number: 91118 www.vishay.com5IRFBE30PbFDocument Number: 91118 www.vishay.com6IRFBE30PbFTO-220AB Package Ou

..2. Size:167K international rectifier irfbe30.pdf

..3. Size:1517K vishay irfbe30 sihfbe30.pdf

IRFBE30, SiHFBE30Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 800Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.0RoHS* Fast SwitchingQg (Max.) (nC) 78COMPLIANT Ease of ParallelingQgs (nC) 9.6Qgd (nC) 45 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

..4. Size:1469K infineon irfbe30 sihfbe30.pdf

..5. Size:284K inchange semiconductor irfbe30.pdf

iscN-Channel MOSFET Transistor IRFBE30FEATURESLow drain-source on-resistance:RDS(ON) =3.0 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

0.1. Size:589K international rectifier irfbe30spbf irfbe30lpbf.pdf

PD — 95507IRFBE30SPbFIRFBE30LPbFHEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche RatedD Fast SwitchingVDSS = 800V Ease of Paralleling Simple Drive RequirementsRDS(on) = 3.0 Lead-FreeGID = 4.1ASDescriptionThird Generation HEXFETs from InternationalRectifier provide the designer with the bestcombination of fast switching, ruggedized device

0.2. Size:471K vishay irfbe30l irfbe30lpbf irfbe30s irfbe30spbf.pdf

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 800DefinitionRDS(on) ()VGS = 10 V 3.0 Dynamic dV/dt RatingQg (Max.) (nC) 78 Repetitive Avalanche RatedQgs (nC) 9.6 Fast SwitchingQgd (nC) 45 Ease of ParallelingConfiguration Single Simple Drive Requirem

0.3. Size:448K vishay irfbe30s sihfbe30s irfbe30l sihfbe30l.pdf

Другие MOSFET… IRFBC32
, IRFBC40
, IRFBC40A
, IRFBC40AS
, IRFBC40L
, IRFBC40S
, IRFBC42
, IRFBE20
, CEP83A3
, IRFBF20
, IRFBF20L
, IRFBF20S
, IRFBF30
, IRFBG20
, IRFBG30
, IRFBL10N60A
, IRFBL12N50A
.

IRFBE30 Datasheet PDF — Vishay

Part Number	IRFBE30
Description	Power MOSFET ( Transistor )
Manufacturers	Vishay
Logo
There is a preview and IRFBE30 download ( pdf file ) link at the bottom of this page. Total 9 Pages

Preview 1 page

No Preview Available !

Power MOSFET
IRFBE30, SiHFBE30
Vishay Siliconix
PRODUCT SUMMARY

VDS (V)

RDS(on) ()

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration
800

VGS = 10 V

78
9.6
45
Single
D
TO-220AB
3.0
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRFBE30PbF
SiHFBE30-E3
IRFBE30
SiHFBE30

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER
SYMBOL
Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current

Pulsed Drain Currenta

VGS at 10 V

TC = 25 °C

TC = 100 °C

IDM

Linear Derating Factor

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TC = 25 °C

EAS

IAR

EAR

dV/dt
Operating Junction and Storage Temperature Range

TJ, Tstg

Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 , IAS = 4.1 A (see fig. 12).

c. ISD  4.1 A, dI/dt  100 A/μs, VDD  600, TJ  150 °C.

d. 1.6 mm from case.
LIMIT
800
± 20
4.1
2.6
16
1.0
260
4.1
13
125
2.0
— 55 to + 150

300d

10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91118
S11-0516-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 9 — Maximum Drain Current vs. Case Temperature
IRFBE30, SiHFBE30
Vishay Siliconix

VDS

VGS

D.U.T.
10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a — Switching Time Test Circuit

VDS

90 %
10 %

VGS

td(on) tr

td(off) tf

Fig. 10b — Switching Time Waveforms
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91118
S11-0516-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Preview 5 Page

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IRFBE30 electronic component.