Интернет-справочник основных параметров транзисторов. параметры транзистора irfb3607pbf

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PD — 96329
Applications

l High Efficiency Synchronous Rectification in

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

l Lead-Free

l Halogen-Free

G
Absolute Maximum Ratings
Symbol
Parameter

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

ID @ TC = 100°C

IDM

Continuous Drain Current, VGS @ 10V

dPulsed Drain Current

PD @TC = 25°C Maximum Power Dissipation

Linear Derating Factor

VGS

dv/dt
Gate-to-Source Voltage

fPeak Diode Recovery

TJ Operating Junction and

TSTG

Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics

EAS (Thermally limited)

IAR

EAR

eSingle Pulse Avalanche Energy

ÃAvalanche Current

gRepetitive Avalanche Energy

Thermal Resistance
Symbol
Parameter

jRθJC Junction-to-Case

RθCS

Case-to-Sink, Flat Greased Surface, TO-220

RθJA Junction-to-Ambient, TO-220

IRFB3607GPbF

HEXFETPower MOSFET

D VDSS

RDS(on) typ.

max.

S ID

75V

7.34m

9.0m

80A
D
G
Gate
S
D
G
TO-220AB
IRFB3607GPbF
D
Drain
S
Source
Max.

80

56

310
140
0.96
± 20
27
-55 to + 175
300

x x10lb in (1.1N m)

120
46
14
Typ.
–––
0.50
–––
Max.
1.045
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com

1http://www.Datasheet4U.com

08/12/10

IRFB3607GPbF
10.00
1.00
D = 0.50
0.10
0.01
0.00
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

R2R2

τ2 τ2

R3R3

τ3 τ3

R4R4

τCτ

Ri (°C/W)
0.01109
0.26925

τi (sec)

0.000003
0.000130

τ4τ4 0.49731 0.001301

CiC= iτiRiiRi

0.26766 0.008693
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000
Duty Cycle = Single Pulse
100
0.01
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Tj = 150°C and

Tstart =25°C (Single Pulse)
10 0.05
0.10
1
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ∆Τ j = 25°C and

Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

1.0E-01
150
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
125 ID = 46A
100
75
50
25
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).

6. Iav = Allowable avalanche current.

7. ∆T = Allowable rise in junction temperature, not to exceTejmdax (assumed as

25°C in Figure 14, 15).

tav = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

ZthJC(D, tav) = Transient thermal resistance, see Figures 13)

25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)

Fig 15. Maximum Avalanche Energy vs. Temperature

PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC

Iav = 2DT/ [1.3·BV·Zth

EAS (AR) = PD (ave)·tav

www.irf.com
5

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