Ss8550 транзистор характеристики на русском

Транзистор ss8550: характеристики и цоколевка

S8550 transistor explanation for electrical specification and application

In this section, we discuss the electrical specifications of the S8550 transistor, this explanation will be really helpful for the replacement process of this transistor device.

Voltage specs

The terminal voltage specs of the S8550 transistor are collector to the base is -40V, collector to emitter voltage is -25V, and emitter to base voltage is -6V, the voltage specifications show that the S8550 transistor had low power applications.

The emitter to collector saturation voltage value is -0.28V to -0.50V, the saturated voltage is always lesser than the base voltage of the device.

The saturation voltage of the S8550 transistor shows that they had more applications with switching circuits.

Current specs

The collector’s current value is -1.5A, the current value of the S8550 transistor shows the load capacity of the device.

Transition frequency

The bandwidth transition frequency value of the S8850 transistor is 100 to 200MHz, it is the frequency range of the transistor.

Junction temperature

 The junction temperature is -55 to 150℃ for the S8850 transistor, it is the capacity of the device at the temperature change.

M8550S Datasheet (PDF)

0.1. m8550s.pdf Size:346K _jiangsu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8550S TRANSISTOR (PNP) TO-92 FEATURES 1.EMITTER Power Dissipation 2. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collecto

9.1. m8550t.pdf Size:818K _secos

M8550T -0.8A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE AD Power Dissipation BE CFG H1Emitter 1112Base 2223Collector 333J Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified

9.2. m8550.pdf Size:738K _secos

M8550 -40V, -0.8A, 200mW PNP Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Power dissipation AL33MARKING Top View C B11 2Product Marking Code 2K EM8550 Y21 DH JF GCLASSIFICATION OF hFE(2) Product-Rank M8550-L M8550-H Millimeter Millimeter REF. R

 9.3. m8550.pdf Size:721K _htsemi

M8 550TRANSISTOR(PNP)SOT-23 FEATURES Power dissipation MARKING: Y21 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A PC Collector power dissipation 200 mW Tj Ju

9.4. m8550.pdf Size:292K _gsme

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8550FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage lf Small Motor Complementary to GM8050 GM8050 (Ta=25 )

 9.5. m8550 sot-23.pdf Size:414K _lge

M8550 SOT-23 Transistor(PNP)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.8 A

9.6. m8550 to-92.pdf Size:189K _lge

M8550(PNP)TO-92 TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -800 mA Dimensions in inches and (millimeters)PC Colle

9.7. m8550lt1.pdf Size:429K _wietron

M8550LT1PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.0 8003002.44170.125100 40 5.01000.15u35u4.0 0.15WEITRON1/4 15-Jul-10http://www.weitron.com.twM8550LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gain-

Использование в двухтактной конфигурации

Как уже упоминалось в параметрах, S8550 обычно используется в двухтактной конфигурации с усилителем класса B. Итак, давайте обсудим, как это делается.

Двухтактный усилитель, обычно известный как усилитель класса B, является типом многоступенчатого усилителя, обычно используемого для усиления звука динамика. Это очень просто построить и требует двух идентичных дополнительных транзисторов. Под дополнительным подразумевается, что нам нужен транзистор NPN и его эквивалентный PNP. Простая принципиальная схема усилителя класса B с использованием S8050 показана ниже.

2D модель корпуса

Если вы проектируете печатную плату или перфорированную плату с этим компонентом, вам будет полезно изучить следующее изображение , чтобы узнать тип и размеры корпуса данного устройства.

S8550 transistor characteristics

static characteristics of the S8550 transistor

The figure shows the static characteristics of the S8550 transistor, the graph is plotted with collector current vs collector to emitter voltage.

At different base current values, the collector current will be increased from a lower value to a higher one, then the collector current will be constant.

The voltage value will increase towards the higher value and become infinite.

DC current gain characteristics of the S8550 transistor

The figure shows the DC current gain characteristics of the S8550 transistor, the graph is plotted with dc current gain vs collector current.

At a constant collector to an emitter voltage value, the current gain value will be increasing at the initial stage and decreases at the end.

saturation voltage value of the S8550 transistor

The figure shows the saturation voltage value of the S8550 transistor, the graph is plotted with the base to emitter saturation voltage and emitter to collector saturation value with collector current.

S8850 vs MPS750 vs BC527

In the table, we listed the electrical specifications of S8550, MPS750, and BC527 transistors, this will be helpful for a better understanding of the transistor devices.

Characteristics S8850 MPS750 BC527
Collector to base voltage (VCB)      -40V -60V -60V
Collector to emitter voltage (VCE) -25V -40V -60V
Emitter to base voltage (VEB) -6V -5V -6V
Collector to emitter saturation voltage (VCE (SAT)) -0.28 to 0.50V -0.3V to 0.5V -0.7 to 1.2V
Collector current (IC) -1.5A -2A -1A
Power dissipation 1W 625mW 625mW
Junction temperature (TJ) -65 to +150°C -65 to +150°C -55 to +150°C
Transition frequency (FT) 100 to 200MHZ 75MHZ 100MHZ
Gain (hFE) 40 to 300hFE 75hFE 40 to 400hFE
Package TO-92 TO-92 TO-92
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