Интернет-справочник основных параметров транзисторов. параметры транзистора mj15024g

Mj15023: mj15023 транзистор характеристики, аналоги, datasheet, параметры, цоколевка, маркировка — производство и поставка электростанций, бензиновые и дизельные генераторы от 1 до 100 квт. мини тэц на базе двигателя стирлинга.

Биполярный транзистор MJ15024G — описание производителя. Основные параметры. Даташиты.

Наименование производителя: MJ15024G

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 250
W

Макcимально допустимое напряжение коллектор-база (Ucb): 400
V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250
V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V

Макcимальный постоянный ток коллектора (Ic): 16
A

Предельная температура PN-перехода (Tj): 200
°C

Граничная частота коэффициента передачи тока (ft): 4
MHz

Ёмкость коллекторного перехода (Cc): 500
pf

Статический коэффициент передачи тока (hfe): 15

Корпус транзистора:

MJ15024G
Datasheet (PDF)

 ..1. Size:73K  onsemi mj15024g.pdf

NPN — MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) — 2 A @ 80 V High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

 7.1. Size:161K  onsemi mj15022 mj15024.pdf

MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 — 250 VOLTS, 250 WATTS

 7.2. Size:114K  jmnic mj15022 mj15024.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas

 7.3. Size:191K  cn sptech mj15022 mj15024.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag

 7.4. Size:215K  inchange semiconductor mj15022 mj15024.pdf

isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA

 7.5. Size:212K  inchange semiconductor mj15024.pdf

isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

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MJ15024G Datasheet (PDF)

 ..1. Size:73K  onsemi mj15024g.pdf

NPN — MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) — 2 A @ 80 V High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack

 7.1. Size:161K  onsemi mj15022 mj15024.pdf

MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 — 250 VOLTS, 250 WATTS

 7.2. Size:114K  jmnic mj15022 mj15024.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas

 7.3. Size:191K  cn sptech mj15022 mj15024.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag

 7.4. Size:215K  inchange semiconductor mj15022 mj15024.pdf

isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA

 7.5. Size:212K  inchange semiconductor mj15024.pdf

isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE

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