Биполярный транзистор MJ15024G — описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ15024G
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 250
W
Макcимально допустимое напряжение коллектор-база (Ucb): 400
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 16
A
Предельная температура PN-перехода (Tj): 200
°C
Граничная частота коэффициента передачи тока (ft): 4
MHz
Ёмкость коллекторного перехода (Cc): 500
pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора:
MJ15024G
Datasheet (PDF)
..1. Size:73K onsemi mj15024g.pdf
NPN — MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) — 2 A @ 80 V High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack
7.1. Size:161K onsemi mj15022 mj15024.pdf
MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 — 250 VOLTS, 250 WATTS
7.2. Size:114K jmnic mj15022 mj15024.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas
7.3. Size:191K cn sptech mj15022 mj15024.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag
7.4. Size:215K inchange semiconductor mj15022 mj15024.pdf
isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA
7.5. Size:212K inchange semiconductor mj15024.pdf
isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE
Другие транзисторы… MJ14003G
, MJ15001G
, MJ15003G
, MJ15004G
, MJ15015G
, MJ15016G
, MJ15022G
, MJ15023G
, 2N3055
, MJ15025G
, MJ16018-1400V
, MJ21193G
, MJ21194G
, MJ21195G
, MJ21196G
, MJ2955G
, MJ3055
.
MJ15024G Datasheet (PDF)
..1. Size:73K onsemi mj15024g.pdf
NPN — MJ15022, MJ15024**MJ15024 is a Preferred DeviceSilicon Power TransistorsThe MJ15022 and MJ15024 are PowerBase power transistorsdesigned for high power audio, disk head positioners and other linearapplications.Featureshttp://onsemi.com High Safe Operating Area (100% Tested) — 2 A @ 80 V High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc16 AMPERES Pb-Free Pack
7.1. Size:161K onsemi mj15022 mj15024.pdf
MJ15022 (NPN),MJ15024 (NPN)Silicon Power TransistorsThe MJ15022 and MJ15024 are power transistors designed for highpower audio, disk head positioners and other linear applications.Features http://onsemi.com High Safe Operating Area High DC Current Gain 16 AMPERES These Devices are Pb-Free and are RoHS Compliant* SILICON POWER TRANSISTORS200 — 250 VOLTS, 250 WATTS
7.2. Size:114K jmnic mj15022 mj15024.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors MJ15022 MJ15024 DESCRIPTION With TO-3 package Complement to type MJ15023 MJ15025 Excellent Safe Operating Area High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS Designed for high power audio, disk head positioners and other linear applications PINNING(see Fig.2) PIN DESCRIPTION1 Bas
7.3. Size:191K cn sptech mj15022 mj15024.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITMJ15022 350V Collector-Base Voltag
7.4. Size:215K inchange semiconductor mj15022 mj15024.pdf
isc Silicon NPN Power Transistors MJ15022/15024DESCRIPTIONComplement to Type PNP MJ15023/15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARA
7.5. Size:212K inchange semiconductor mj15024.pdf
isc Silicon NPN Power Transistors MJ15024DESCRIPTIONComplement to Type PNP MJ15025Excellent Safe Operating AreaHigh DC current GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio, disk head positionersand other linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE