2SD467 Datasheet (PDF)
..1. Size:30K hitachi 2sd467.pdf
2SD467Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB561OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD467Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollec
..2. Size:402K blue-rocket-elect 2sd467.pdf
2SD467(BR3DG467K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features 2SB561(BR3CG561K) Complementary pair with 2SB561(BR3CG561K). / Applications Low frequency power amplifier. / Equivalent Circuit
0.1. Size:175K renesas 2sd467b 2sd467c.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.1. Size:111K utc 2sd468.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD468 NPN SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER FEATURES 1TO-92* Low frequency power amplifier * Complement to 2SB562 1TO-92NL*Pb-free plating product number: 2SD468L ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating 1 2 32SD468-x-T92-B 2SD468L-x-T92-B TO-92 E C B Tape Box2SD
9.2. Size:4020K jiangsu 2sd468.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO 92L 2SD468 TRANSISTOR (NPN) 1. EMITTER 2. COLLECTOR FEATURES Low Frequency Power Amplifier 3. BASE Complementary Pair with 2SB562 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 25 V VCEO Collector-Emitte
9.3. Size:561K blue-rocket-elect 2sd468.pdf
2SD468(BR3DG468L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SB562(BR3CG562L) Complementary pair with 2SB562(BR3CG562L). / Applications Low frequency power amplifier. / Equivalent Circuit
9.4. Size:159K china 2sd468-b-c.pdf
************************************************************************************ 2SD468 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS(Ta=25 )Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter -Base Voltage VEBO 5 V Collector Current (DC) Ic 1 A Collector Dissipation (Tc=25
9.5. Size:190K inchange semiconductor 2sd460.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD460DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switching
9.6. Size:207K inchange semiconductor 2sd469.pdf
isc Silicon NPN Darlingtion Power Transistor 2SD469DESCRIPTION Low Collector-Emitter Breakdown VoltageV = 110V (Min)(BR)CEOCollector Power DissipationPc=100W@TC=25Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators, motor control systems etc.ABSOLUTE MAXIM
9.7. Size:186K inchange semiconductor 2sd463.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD463DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 3000(Min) @I = 5AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power
Аналоги
Для замены могут подойти транзисторы кремниевые, со структурой NPN, эпитаксиально-планарные, предназначены для применения в оконечных каскадах усилителей звуковой частоты, стабилизаторах напряжения и преобразователях напряжения в аппаратуре общего назначения.
Отечественное производство
| Модель | PC | UCB | UCE | UBE | IC | TJ | fT | CC | hFE | Корпус |
|---|---|---|---|---|---|---|---|---|---|---|
| 2SD1047 | 100 | 160 | 140 | 6 | 12 | 150 | 15 | 210 | 60 | TO-247 |
| КТ892А/Б | 175 | 350 | 350 | 5 | 15 | 150 | — | — | 300 | TO-3 |
| КТ897Б | 125 | 200 | 200 | 5 | 20 | — | 10 | — | 400 | TO-3 |
| КТ898А/Б | 125 | 350 | — | 5 | 20 | 200 | 10 | — | 400 | TO-218 |
| КТ8101А/Б | 150 | 200 | — | 6 | 16 | 150 | 10 | 1000 | 20 | TO-218 |
| КТ8107А | 100 | 1500 | 700 | 5 | 8 | 150 | 7 | — | 2…8 | TO-3 |
| КТ8114А/Б | 125 | 1500 | — | 5 | 8 | 150 | — | — | 8 | TO-3 |
| КТ8117А | 100 | 700 | 600 | 5 | 10 | 150 | 4 | — | 10 | TO-3 |
| КТ8150А | 115 | 70 | 60 | 7 | 15 | 150 | 4 | — | 20 | TO-3 |
| КТ8158Б | 125 | 100 | 100 | 5 | 12 | 150 | 4 | — | 1000 | TO-3 |
Зарубежное производство
| Модель | PC | UCB | UCE | UBE | IC | TJ | fT | CC | hFE | Корпус |
|---|---|---|---|---|---|---|---|---|---|---|
| 2SD1047 | 100 | 160 | 140 | 6 | 12 | 150 | 15 | 210 | 60 | TO-247 |
| 2SC5669 | 140 | 250 | 230 | 6 | 15 | 150 | 15 | 200 | 60 | TO-3PN |
| 2SD1975A | 150 | 200 | 200 | 5 | 15 | 150 | 20 | 200 | 60 | TO-3PL |
| 2SD2489 | 130 | 200 | 200 | 5 | 15 | 150 | 70 | 120 | 5000 | TO-3PN |
| BU941B | 155 | — | 350 | 5 | 15 | 175 | — | — | 300 | TO-3P |
| MJL3281A | 200 | 200 | 200 | 7 | 15 | 150 | 30 | 600 | 75 | TO-3PBL, TO-264 |
| MJL4281A | 230 | 350 | 350 | 5 | 15 | 150 | 35 | 600 | 80 | TO-3PBL, TO-264 |
| NJW0302 | 150 | 250 | 250 | 5 | 15 | 150 | 30 | 400 | 60 | TO-3P |
| NJW1302 | 200 | 200 | 250 | 5 | 15 | 150 | 30 | 600 | 60 | TO-3P |
| 2SC4059 | 130 | 600 | 450 | 7 | 15 | 175 | 20 | — | 60 | TO-247 |
| 2SC4108N | 100 | 500 | 400 | 7 | 12 | 150 | 20 | 160 | — | TO-247 |
| ET359 | 100 | 300 | 200 | — | 80 | 175 | — | — | 80 | TO-247 |
| IDD1314 | 150 | 450 | — | — | 15 | 150 | — | — | 100 | TO-247 |
Примечание: данные таблиц получены из даташит компаний-производителей.
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