Характеристики транзистора d1047 (2sd1047)

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2482
High-Voltage Switching and Amplifier Applications
Color TV Horizontal Driver Applications
Color TV Chroma Output Applications
2SC2482
Unit: mm

• High breakdown voltage: VCEO = 300 V

• Small collector output capacitance: Cob = 3.0 pF (typ.)

• Recommended for chroma output and driver applications for

line-operated TV horizontal.

Maximum Ratings (Ta = 25°C)

Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

Rating
300
300
7
100
50
900
150

−55 to 150

Unit
V
V
V
mA
mA
mW
°C
°C

Electrical Characteristics (Ta = 25°C)

Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol

ICBO

IEBO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

fT

Cob

Test Condition

VCB = 240 V, IE = 0

VEB = 7 V, IC = 0

VCE = 10 V, IC = 4 mA

VCE = 10 V, IC = 20 mA

IC = 10 mA, IB = 1 mA

IC = 10 mA, IB = 1 mA

VCE = 10 V, IC = 20 mA

VCB = 20 V, IE = 0, f = 1 MHz

JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit

― ― 1.0 µA

― ― 1.0 µA

20 ― ―

30 ― 150

― ― 1.0 V

― ― 1.0 V

50 ― ― MHz

― 3.0 ― pF

Marking
C2482
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26

120

100
80
60
40
20

IC – VCE

6
4
Common emitter
Ta = 25°C
32
1
0.6
0.4
IB = 0.2 mA
4 8 12 16 20

Collector-emitter voltage VCE (V)

24
2SC2482
1000
500
300
100
50
30
10
5
0.3

hFE – IC

Common emitter
Ta = 25°C
VCE = 20 V
10
5
1 3 10 30

Collector current IC (mA)

100
1000
500
300
100
50
30
10
5
0.3

hFE – IC

Common emitter
VCE = 10 V
Ta = 100°C

25 −25

1 3 10 30

Collector current IC (mA)

100
10
5
3
1
0.5
0.3
0.1
0.05
0.3

VCE (sat) – IC

Common emitter
Ta = 25°C
IC/IB = 10
5
2
1 3 10 30

Collector current IC (mA)

100
10
5
3
1
0.5
0.3
0.1
0.05
0.3

VCE (sat) – IC

Common emitter
IC/IB = 5
Ta = 100°C

−25 25

1 3 10 30

Collector current IC (mA)

100
10
5
3
1
0.5
0.3
0.0
0.05
0.3

VBE (sat) – IC

Common emitter
IC/IB = 5
Ta = 25°C
1 3 10 30

Collector current IC (mA)

100
2 2004-07-26

100

Common emitter
VCE = 10 V
80

IC – VBE

60
Ta = 100°C 25

−25

40
20

0.2 0.4 0.6 0.8 1.0 1.2

Base-emitter voltage VBE (V)

Cob – VCB

100
IE = 0

50 f = 1 MHz

Ta = 25°C
30
10
5
3
1
0.5
0.3
1 3 10 30

Collector-base voltage VCB (V)

100
2SC2482
1000
500
300
100
50
30
10
5
0.3

fT – IC

Common emitter
Ta = 25°C
VCE = 20 V
5 10
1 3 10 30

Collector current IC (mA)

100
Safe Operating Area
300

IC max (pulsed)*

300 µs*

IC max (continuous)
100
1 ms

10 ms*

100 ms*

50 500 ms*

30
DC operation
Ta = 25°C
10

*: Single nonrepetitive pulse

5 Ta = 25°C

Curves must be derated linearly with
increase in temperature.
2
3 10 30
VCE max
100 300

Collector-emitter voltage VCE (V)

3 2004-07-26

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2SC3856

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)

Application : Audio and General Purpose

sAbsolute maximum ratings (Ta=25°C)

Symbol
2SC3856
Unit

VCBO 200 V

VCEO 180 V

VEBO 6 V

IC 15 A

IB 4 A

PC

130(Tc=25°C)
W
Tj 150 °C

Tstg

–55 to +150
°C

sElectrical Characteristics

(Ta=25°C)
Symbol
Conditions
2SC3856 Unit

ICBO

IEBO

VCB=200V

VEB=6V

100max

100max

µA

µA

V(BR)CEO

IC=50mA

180min

V

hFE

VCE=4V, IC=3A

50min∗

VCE(sat)

IC=5A, IB=0.5A

2.0max

V

fT

VCE=12V, IE=–0.5A

20typ

MHz

COB

VCB=10V, f=1MHz

300typ

pF

∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)

External Dimensions MT-100(TO3P)

15.6±0.4

9.6

4.8±0.2

2.0±0.1

a ø3.2±0.1

b
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1

sTypical Switching Characteristics (Common Emitter)

VCC

RL

IC

VBB1

VBB2

IB1

(V) (Ω) (A) (V) (V) (A)

40 4 10 10 –5 1

IB2 ton tstg tf

(A) (µs) (µs) (µs)

–1 0.5typ 1.8typ 0.6typ

5.45±0.1

5.45±0.1

1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.

I C– V CE Characteristics (Typical)

15
700mA
500mA
300mA
200mA
10
100mA

5 50mA

IB=20mA

0 12 34

Collector-Emitter Voltage VCE(V)

V CE( s a t ) – I B Characteristics (Typical)

3

I C– V BE Temperature Characteristics (Typical)

(VCE=4V)

15
2 10
1

IC=10A

5A

0 0.5 1.0 1.5 2.0

Base Current IB(A)

5

012

Base-Emittor Voltage VBE(V)

h FE– I C Characteristics (Typical)

www.DataSheet4U.com
300

(VCE=4V)

h FE– I C Temperature Characteristics (Typical)

200
125˚C

(VCE=4V)

100

100 Typ

25˚C

50 50 –30˚C

θ j-a– t Characteristics

3
1
0.5
20
0.02
0.1 0.5 1

Collector Current IC(A)

5 10 15
20
0.02
0.1 0.5 1

Collector Current IC(A)

5 10 15
0.1
1
10 100
Time t(ms)
1000 2000

f T– I E Characteristics (Typical)

(VCE=12V)

30
Typ
20

Safe Operating Area (Single Pulse)

40

1 0 10100mmss3ms

DC
5
Pc–Ta Derating
130
100
10

–0.02
78
–0.1
–1

Emitter Current IE(A)

1 50
0.5
Without Heatsink
Natural Cooling
0.1
–10 3
10
100 200
Without Heatsink
3.5

0 25 50
75
100 125 150

Collector-Emitter Voltage VCE(V)

Ambient Temperature Ta(˚C)

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