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DC COMPONENTS CO., LTD.

R DISCRETE SEMICONDUCTORS

2SB564A
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency power amplifier
applications.
TO-92
Pinning
1 = Emitter
2 = Collector
3 = Base

Absolute Maximum Ratings(TA=25oC)

Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

www.DataSheet4CU.ocollmector Current

Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol

VCBO

VCEO

VEBO

IC

PD

TJ

TSTG

Rating
-30
-25
-5
-1
800
+150
-55 to +150
Unit
V
V
V
A
mW

oC

oC

.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min

2o Typ

2o Typ

.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050

5oTyp. 5oTyp. (1.27)Typ

Dimensions in inches and (millimeters)
Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

Characteristic
Symbol Min
Collector-Base Breakdown Volatge

BVCBO -30

Collector-Emitter Breakdown Voltage

BVCEO -25

Emitter-Base Breakdown Volatge

BVEBO

-5
Collector Cutoff Current

Collector-Emitter Saturation Voltage(1)

Base-Emitter Saturation Voltage(1)

DC Current Gain(1)

ICBO

VCE(sat)

VBE(sat)

hFE

—
—
—
70
Transition Frequency

fT —

Output Capacitance

Cob —

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%

Typ
—
—
—
—
—
—
—
110
18
Max
—
—
—
-100
-0.5
-1.2
400
—
—
Unit
V
V
V
nA
V
V
—
MHz
pF
Test Conditions

IC=-100µA, IE=0

IC=-10mA, IB=0

IE=-100µA, IC=0

VCB=-30V, IE=0

IC=-1A, IB=-100mA

IC=-1A, IB=-100mA

IC=-100mA, VCE=-1V

IC=-10mA, VCE=-6V, f=100MHz

VCB=-6V, f=1MHz

Classification of hFE

Rank
O
Range
70~140
Y
120~240
GR
200~400

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