MJE2955T vs 2N6490 vs 2N5988
In the table below, we list and compare the electrical specifications of MJE2955T, 2N6490, and 2N5988, this specs comparison is really helpful for better understanding.
| Characteristics | MJE2955T | 2N6490 | 2N5988 |
|---|---|---|---|
| Collector to base voltage (VCB) | 70V | 70V | 80V |
| Collector to emitter voltage (VCE) | 60V | 60V | 80V |
| Emitter to base voltage (VEB) | 5V | 5V | 5V |
| Collector to emitter saturation voltage (VCE (SAT)) | 1.1 to 8V | 1.3 to 3.5V | 0.6V to 1.7V |
| Collector current (IC) | 10A | 15A | 12A |
| Base current (IB) | 6A | 5A | 4A |
| Power dissipation | 75W | 75W | 100W |
| Junction temperature (TJ) | -55 to +150°C | -65 to +150°C | -65 to +150℃ |
| Thermal resistance | 1.67℃/W | 1.67℃/W | 1.25℃/W |
| Transition frequency (FT) | 2MHz | 5MHz | 2MHz |
| Gain (hFE) | 20 to 100hFE | 5 to 150hFE | 7 to 120hFE |
| Package | TO-220 | TO-220 | TO-225 |
MJE2955T transistor characteristics curves
DC current gain characteristics of the MJE2955T
The figure shows the DC current gain characteristics of the MJE2955T transistor, which are plots with DC current gain vs collector current.
At constant collector to an emitter voltage value, the DC current gain curve of the MJE2955T transistor is plotted at three temperature ranges.
The DC gain curve is plotted as a parabolic shape, which gains value increases at starting stage and dips at the end.
safe operating area characteristics of the MJE2955T
The figure shows the safe operating area characteristics of the MJE2955T transistor, the graph plots with collector current vs collector to emitter voltage and temperature range, and switching speed.
MJE2955T transistor electrical specification description
Here we explain the important electrical specifications of the MJE2955T transistor, this explanation is really helpful for a better understanding of the transistor device.
Voltage specs
The voltage specs of the MJE2955T transistor are collector to emitter voltage is 60V, collector to base voltage is 70V, and emitter to base voltage is 5V.
The collector to emitter saturation voltage of MJE2955T transistor is 1.4V, it is the difference between collector & emitter voltages and base voltage.
Overall voltage specifications of the MJE2955T transistor indicate that it is a high-voltage power transistor.
Current specs
The collector current value of the MJE2955T transistor is 10A, this transistor had a higher load capacity.
The base current value of the MJE2955T transistor is 6A, it is the current value that indicates the triggering.
The current specifications of the MJE2955T transistor indicate that it had a higher current capacity for works at switching applications.
Dissipation specs
The power dissipation value of the MJE2955T transistor is 75W, the dissipation ability of the semiconductor is mainly dependent on the package and it is the whole product of voltage and the current value of the device.
DC current gain specs
The DC current gain value of the MJE2955T transistor is 20 to 100hFE, the gain value of the device shows the amplification capacity of the transistor.
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