Mje15032g. параметры транзистора биполярного, низкочастотного, npn. справочник параметров транзисторов

MJE15032G Datasheet (PDF)

..1. Size:166K onsemi mje15032g.pdf

MJE15032 (NPN),MJE15033 (PNP)Complementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 AmpereshFE = 70 (Min) @ IC = 0.5 Adc 8.0 AMPERES= 10 (Min) @ IC = 2.0 AdcPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 250 Vd

6.1. Size:141K motorola mje15032.pdf

Order this documentMOTOROLAby MJE15032/DSEMICONDUCTOR TECHNICAL DATANPN*MJE15032Complementary Silicon PlasticPNPPower Transistors*MJE15033. . . designed for use as high freque

6.2. Size:89K onsemi mje15032-33.pdf

ON SemiconductortNPNComplementary Silicon Plastic*MJE15032Power TransistorsPNP. . . designed for use as highfrequency drivers in audio amplifiers.*MJE15033 DC Current Gain Specified to 5.0 AmpereshFE = 50 (Min) @ IC = 0.5 Adc= 10 (Min) @ IC = 2.0 Adc*ON Semiconductor Preferred Device CollectorEmitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) M

6.3. Size:75K onsemi mje15032 mje15033.pdf

MJE15032 (NPN),MJE15033 (PNP)Preferred DevicesComplementary SiliconPlastic Power TransistorsDesigned for use as high-frequency drivers in audio amplifiers.http://onsemi.comFeatures DC Current Gain Specified to 5.0 Amperes8.0 AMPEREShFE = 70 (Min) @ IC = 0.5 AdcPOWER TRANSISTORS= 10 (Min) @ IC = 2.0 AdcCOMPLEMENTARY SILICON Collector-Emitter Sustaining Voltage —

6.4. Size:280K cdil mje15032 33.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORS MJE15032 NPNMJE15033 PNPTO — 220Plastic PackageHigh — Frequency Drivers in Audio AmplifierABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector- Base Voltage VCBO 250 VCollector- Emitter Voltage VCEO 250 V5Emitter- Base Voltage VEBO V8

6.5. Size:172K cn sptech mje15032.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor MJE15032DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC current gain -: h = 50 (Min) @I = 0.5 AFE C: h = 10 (Min) @I = 2.0 AFE CComplement to Type MJE15033APPLICATIONSDesigned for use as highfrequency drivers in audioamplifiers.ABSOLUTE MAXIMUM RATINGS (Ta=25)S

6.6. Size:132K inchange semiconductor mje15032.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE15032 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) DC current gain — : hFE = 50 (Min) @IC= 0.5 A : hFE = 10 (Min) @IC= 2.0 A Complement to Type MJE15033 APPLICATIONS Designed for use as highfrequency drivers in audio amplifiers. ABSOLUTE MAXIMUM RA

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Модификации (версии) транзистора 13009

Данные по временным параметрам (t_on, t_s, t_f) в таблице приведены для резистивной нагрузки (если не указано иное).

Тип	P_C Ta=25°C/T_c=25°C	U_CB	U_CE	U_EB	I_C/I_CM	T_J	h_FE	f_T	C_ob	U_CE(sat)	t_on/ t_s/ t_f	Корпус	Примечания
13009	2/100	700	400	9	12/-	150	8…40	≥ 4	—	≤ 0,8	0,4/7,0/0,4	TO220
13009A	2/110	700	400	9	12/-	150	8…40	≥ 4	—	≤ 0,8	0,5/8,0/0,4	TO220
13009SDL	2/100	400	200	9	15/-	150	8…30	≥ 4	—	≤ 1,0	1,0/6,0/1,0	TO220
13009T	2/95	700	400	9	11/-	150	8…40	≥ 5	—	≤ 0,8	0,4/6,0/0,4	TO220
3DD13009	2/-	700	400	9	12/-	150	8…40	≥ 4	—	≤ 1,5	-/4,0/0,9	TO220
3DD13009A8	2/100	700	400	9	12/24	150	20…35	≥ 4	—	≤ 1,0	0,6/7,0/0,25	TO220AB
3DD13009AN	3/120	700	400	9	12/24	150	20…35	≥ 4	—	≤ 1,0	0,6/7,0/0,25	TO3P(N)
3DD13009C8	2/100	700	400	9	12/24	150	20…30	≥ 5	—	≤ 1,0	0,3/6,0/0,3	TO220AB
3DD13009K	-/100	700	400	9	12/24	150	5…40	≥ 4	—	≤ 1,8	-/3,0/0,7	TO220C
3DD13009K	-/120	700	400	9	12/24	150	5…40	≥ 4	—	≤ 1,8	-/3,0/0,7	TO3PB
3DD13009X8D	2/100	350	200	9	12/24	150	15…30	≥ 4	—	≤ 1,0	1,0/4,0/1,0	TO220AB
BR3DD13009 X7R	2/90	700	400	9	8/-	150	10…40	≥ 5	—	≤ 1,5	-/9,0/0,8	TO220	MJE13009X7
BR3DD13009 X8F	2/90	700	400	9	8/-	150	10…40	≥ 5	—	≤ 1,5	-/9,0/0,8	TO220F	MJE13009X8
BR3DD13009X9F	2/90	700	400	9	8/-	150	10…40	≥ 5	—	≤ 1,5	-/9,0/0,8	TO3P	MJE13009X9
BR3DD13009 Z8F	2/100	700	400	9	12/-	150	10…40	≥ 5	—	≤ 1,2	-/12,0/0,5	TO220F	MJE13009Z8
FJA13009	-/130	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO3P
FJP13009	-/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220
FJP13009H2TU	-/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220	Группы по h_FE: H1, H2
FJPF13009	-/50	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220F	Группы по h_FE: H1, H2
HMJE13009A	2/100	700	400	9	12/24	150	5…22	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220AB	٭
KSE13009F	-/50	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO20F
KSH13009	-/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220	Группы по h_FE: R, O, Y1, Y2
KSH13009A	-/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220	Группы по h_FE: R, O, Y1, Y2
KSH13009AF	-/50	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220F	Группы по h_FE: R, O, Y1, Y2
KSH13009AL	-/130	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO3P	Группы по h_FE: R, O, Y1, Y2
KSH13009F	-/50	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220F	Группы по h_FE: R, O, Y1, Y2
KSH13009L	-/130	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO3P	Группы по h_FE: R, O, Y
KSH13009W	-/100	700	400	9	12/-	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO263	(D2PAK)
MJE13009	2/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220AB	٭
MJE13009-3PN	2/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO3PN
MJE13009A	-/130	700	400	12	12/-	150	5…40	—	—	≤ 0,8	-/9,0/0,15	TO3P
MJE13009D	2/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220	٭
MJE13009F	-/50	700	400	9	12/24	150	6…28	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220IS
MJE13009-K	2/-	700	400	9	12/24	150	≤ 40	≥ 4	180	≤ 1,5	1,1/4,0/0,7	TO220	٭
MJE13009-K	-/80	700	400	9	12/24	150	≤ 40	≥ 4	180	≤ 1,5	1,1/4,0/0,7	TO3P	٭
MJE13009-P	2/-	700	400	9	12/24	150	≤ 40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220	٭
MJE13009-P	-/80	700	400	9	12/24	150	≤ 40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO3P	٭
MJE13009Z9	2/100	700	400	9	12/-	150	10…40	≥ 5	—	≤ 1,2	-/12,0/0,5	TO3P	3DD13009Z9
MJE13009ZJ	2/80	700	400	9	12/-	150	10…40	≥ 5	—	≤ 1,2	-/12,0/0,5	TO220S	BR3DD13009ZJ
MJF13009	-/50	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,0/0,7	TO220F
P13009	3/120	700	400	9	12/-	150	8…40	≥ 4	—	≤ 0,8	0,4/7,0/0,4	TO3PB
P13009A	3/130	700	400	9	12/-	150	8…40	≥ 4	—	≤ 0,8	0,5/10,0/0,4	TO3PB
PHE13009	-/80	700	400	—	12/24	150	8…40	—	—	≤ 2,0	-/3,3/0,7	TO220AB	٭
SBF13009-O	2,2/50	700	400	9	12/24	150	6…40	≥ 4	—	≤ 1,5	-/10,0/0,8	TO220F
SBP13009-K	2,2/100	700	400	9	12/25	150	5…40	—	—	≤ 2,0	-/3,0/0,4	TO220	٭
SBP13009-O	-/100	700	400	9	12/25	150	6…40	—	—	≤ 1,5	-/3,0/0,4	TO220	٭
SBP13009-S	2,2/100	700	400	9	12/25	150	6…40	—	—	≤ 1,0	-/3,0/0,4	TO220	٭
SBW13009-K	-/120	700	400	9	12/25	150	5…40	≥ 4	—	≤ 2,0	-/10,0/0,8	TO3P(B)
SBW13009-O	-/110	700	400	9	12/25	150	6…40	≥ 4	—	≤ 1,5	-/10,0/0,8	TO3P(B)
SBW13009-S	-/120	700	400	9	12/25	150	6…40	≥ 4	—	≤ 1,5	-/10,0/0,8	TO3P(B)
ST13009	-/100	700	400	12	12/24	150	10…39	—	—	≤ 1,25	-/2,5/0,11	TO220	٭٭
STW13009	-/125	700	400	12	12/24	150	10…36	—	—	≤ 1,25	-/2,5/0,11	TO247	٭٭
STWH13009	-/125	700	400	12	12/24	150	11…30	—	—	≤ 1,0	-/2,5/0,14	TO247	٭٭
TS13009	-/100	700	400	9	12/24	150	6…40	≥ 4	180	≤ 1,5	1,1/3,3/0,5	TO220
WBP13009-K	2,2/100	700	400	9	12/25	150	5…40	—	—	≤ 2,0	-/3,0/0,4	TO220	٭
SXW13009	-/100	700	400	—	12/-	—	8…40	—	—	—	-/4,0/-	TO220

٭ — кроме указанных в таблице, в даташит производителя также приводятся данные по временным параметрам (t_on, t_s, t_f) для случаев индуктивной нагрузки.

٭٭ — в даташит производителя (и в этой таблице) приводятся данные по временным параметрам (t_s, t_f) только для индуктивной нагрузки.