What is 2sd1207?

Опубликовано: Радиолюбителю
Транзистор d1047 (2sd1047): характеристики (параметры), аналоги отечественные, цоколевка

2SD1207 Datasheet PDF — Sanyo Semicon Device

Part Number 2SD1207
Description PNP/NPN Epitaxial Planar Silicon Darlington Transistors
Manufacturers Sanyo Semicon Device　
Logo 　

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Ordering number:930C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB892/2SD1207
Large-Current Switching Applications
Features
· Power supplies, relay drivers, lamp drivers, and
automotive wiring.
Features
· FBET and MBIT processed (Original process of
SANYO).
· Low saturation voltage.
· Large current capacity and wide ASO.
Package Dimensions
unit:mm
2006A
[2SB892/2SD1207]
( ) : 2SB892
Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Allowable Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg

Electrical Characteristics at Ta = 25˚C

Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)50V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)1.5A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz

* : The 2SB892/2SD1207 are graded as follows by hFE at 100mA :

100 R 200 140 S 280 200 T 400 280 U 560
EIAJ : SC-51
SANYO : MP
B : Base
C : Collector
E : Emitter
Ratings
(–)60
(–)50
(–)6
(–)2
(–)4
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
100
40
150
12
(22)
max
(–)0.1
(–)0.1
560
Unit
µA
µA
MHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/4067KI/3145KI No.930–1/4

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2SD1207 Datasheet (PDF)

 ..1. Size:51K  sanyo 2sd1207.pdf

Ordering number : EN930D2SB892 / 2SD1207SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB892 / 2SD1207Large-Current Switching ApplicationsApplications Power supplies, relay drivers, lamp drivers, and automotive wiring.Features FBET and MBIT processed (Original process of SANYO). Low saturation voltage. Large current capacity and

 ..2. Size:942K  blue-rocket-elect 2sd1207.pdf

2SD1207 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,Low saturation voltage, large current capacity. / Applications ,,Power supplies, relay drivers, lamp

 8.1. Size:86K  1 2sd1206.pdf

 8.2. Size:51K  1 2sd1205a.pdf

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

 8.3. Size:42K  rohm 2sd1200.pdf

2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

 8.4. Size:51K  panasonic 2sd1205.pdf

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

 8.5. Size:56K  panasonic 2sd1205 e.pdf

Transistor2SD1205, 2SD1205ASilicon NPN epitaxial planer type darlingtonUnit: mmFor low-frequency amplification6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE= 4000 to 2000.A shunt resistor is omitted from the driver.0.85M type package all

 8.6. Size:31K  hitachi 2sd1209.pdf

2SD1209(K)Silicon NPN Epitaxial, DarlingtonApplication Low frequency power amplifier Complementary pair with 2SA1193(K)OutlineTO-92MOD231. Emitter2. Collector3. Base13212SD1209(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCo

 8.7. Size:114K  inchange semiconductor 2sd1208.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1208 DESCRIPTION With TO-3 package Wide area of safe operation High DC current gain Darlington APPLICATIONS Power regulator for line operated TV PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings (Ta=25) SY

 8.8. Size:185K  inchange semiconductor 2sd1204.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1204DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE

 8.9. Size:183K  inchange semiconductor 2sd1202.pdf

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1202DESCRIPTIONLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverGeneral purpose power amplifiersABSOLUTE

Featured Datasheets

Part Number Description Manufacturers
2SD1205 The function is Silicon NPN epitaxial planer type darlington(For low-frequency amplification). Panasonic Semiconductor
2SD1205A The function is Silicon NPN epitaxial planer type darlington(For low-frequency amplification). Panasonic Semiconductor
2SD1207 The function is PNP/NPN Epitaxial Planar Silicon Darlington Transistors. Sanyo Semicon Device

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Электрические характеристики

Данные в таблице действительны при температуре корпуса Tс=25°C.

Характеристика Обозначение Параметры при измерениях Значения
Ток коллектора выключения, мА ICBO UCB = 80 В, IE = 0 ≤ 0,1
Ток эмиттера выключения, мА IEBO UEB = 4 В, IC = 0 ≤ 0,1
Напряжение насыщения коллектор-эмиттер, В UCE(sat) IC = 5 А, IB = 500 мА ≤ 2,5
Напряжение включения база-эмиттер, В UBE(ON) IC = 1,0 А, UCE = 5 В ≤ 1,5
Статический коэффициент усиления по току hFE (1) ٭ UCE = 5 В, IC = 1,0 А 60…200
hFE (2) UCE = 5 В, IC = 6,0 А ≥ 20
Частота среза, МГц fT UCE = 5 В, IC = 1,0 А 15
Выходная емкость, pF Cob UCB = 10 В, IE = 0, f = 1 МГц 210
Время включения, мкс ٭٭ ton UCC = 20 В, IC = 1 А = 10×IB1 = -10×IB2, RL = 20 Ом 0,26
Время спадания импульса, мкс ٭٭ tf 0,68
Время рассасывания заряда, мкс ٭٭ tstg 6,88

٭ — производитель разделяет транзисторы по величине параметра hFE на группы O и Y в пределах указанного диапазона.

٭٭ — параметры сняты в импульсном режиме: схема для измерения параметров представлена ниже.

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